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Epitaxial Si films Grown on Lattice Matched (LaxY1-x)O3/Si (111) Structures by Molecular Beam Epitaxy

Published online by Cambridge University Press:  11 February 2011

V. Narayanan ,
S. Guha ,
N. A. Bojarczuk  and
M. Copel
V. Narayanan
Affiliation:
IBM T.J. Watson Research Center, P. O. Box 218, Yorktown Heights, NY 10598
S. Guha
Affiliation:
IBM T.J. Watson Research Center, P. O. Box 218, Yorktown Heights, NY 10598
N. A. Bojarczuk
Affiliation:
IBM T.J. Watson Research Center, P. O. Box 218, Yorktown Heights, NY 10598
M. Copel
Affiliation:
IBM T.J. Watson Research Center, P. O. Box 218, Yorktown Heights, NY 10598
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Abstract

Growth of epitaxial Si epitaxial overlayers on lattice matched (LaxY1-x)2O3/Si (LaYO/Si) structures has been investigated by high resolution transmission electron microscopy and reflection high energy electron diffraction. Results indicate that smooth two-dimensional near lattice-matched LaYO (111) films can be grown on Si (111) substrates. However, subsequent Si epitaxial growth on the LaYO/Si structures nucleates as three-dimensional islands, a consequence of the high energy of the Si overlayer/LaYO interface. We have investigated the effect of growth temperature on the microstructure of the Si overlayers. Higher temperatures resulted in the nucleation of large faceted islands and rough overlayers while lower temperatures result in smaller islands that coalesce at an early stage and produce smoother films. In addition, formation of planar defects in these films is attributed to stacking errors on the {111} facets of initial Si islands with lower temperatures resulting in a higher density of stacking faults and twins.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 747: Symposia T/V – Crystalline Oxides on Semiconductors – Interfacial Issues for Oxide-Based Electronics , 2002 , T1.5
Copyright
Copyright © Materials Research Society 2003

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References

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