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Epitaxial PMN-PT Relaxor Thin Films: Dependence of Dielectric and Piezoelectric Properties on Film Thickness

Published online by Cambridge University Press:  10 February 2011

V. Nagarajan
Affiliation:
Department of Materials and Nuclear Engineering, University of Maryland, College Park, MD 20742, USA.
S. P. Alpay
Affiliation:
Department of Materials and Nuclear Engineering, University of Maryland, College Park, MD 20742, USA.
C. S. Ganpule
Affiliation:
Materials Research Science and Engineering Center, University of Maryland, College Park, MD 20742, USA.
B. Nagaraj
Affiliation:
Department of Materials and Nuclear Engineering, University of Maryland, College Park, MD 20742, USA.
S. Aggarwal
Affiliation:
Materials Research Science and Engineering Center, University of Maryland, College Park, MD 20742, USA.
A. L. Roytburd
Affiliation:
Department of Materials and Nuclear Engineering, University of Maryland, College Park, MD 20742, USA.
E. D. Williams
Affiliation:
Materials Research Science and Engineering Center, University of Maryland, College Park, MD 20742, USA.
R. Ramesh
Affiliation:
Department of Materials and Nuclear Engineering, University of Maryland, College Park, MD 20742, USA.
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Abstract

The effect of substrate induced constraint and misfit strain on the structure and piezoelectric properties of epitaxial relaxor ferroelectric lead magnesium niobate-lead titanate (PMN-PT) films were investigated. Relaxor PMN-PT epitaxial 100–400 nm thick films with top and bottom oxide electrodes were grown by pulsed laser deposition on (100) LaAlO3 substrates. A systematic decrease in the temperature of the dielectric maximum with increasing film thickness was observed. This is accompanied by an increase in the room temperature relative dielectric constant. The longitudinal piezoelectric coefficient measured using a scanned probe microscope, increases by almost an order of magnitude with increasing film thickness.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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