Hostname: page-component-7479d7b7d-pfhbr Total loading time: 0 Render date: 2024-07-09T00:34:52.332Z Has data issue: false hasContentIssue false

Epitaxial Monocrystalline SiC Films Grown on Si by Low-Pressure Chemical Vapor Deposition at 750°C

Published online by Cambridge University Press:  25 February 2011

I. Golecki
Affiliation:
Allied-Signal, Inc., Corporate Research and Technology, P.O.B. 1021, Morristown, NJ 07962
F. Reidinger
Affiliation:
Allied-Signal, Inc., Corporate Research and Technology, P.O.B. 1021, Morristown, NJ 07962
J. Marti
Affiliation:
Allied-Signal, Inc., Corporate Research and Technology, P.O.B. 1021, Morristown, NJ 07962
Get access

Abstract

Monocrystalline, epitaxial cubic (100) SiC films have been grown on monocrystalline (100) Si substrates at 750°C, the lowest epitaxial growth temperature reported to date. The films were grown by low-pressure chemical vapor deposition, using methylsilane, SiCH3H3, a single precursor with a Si:C ratio of 1:1, and H2. The films were characterized by means of transmission electron microscopy, single- and double-crystal X-ray diffraction, infra-red absorption, ellipsometry, thickness measurements, four-point probe measurements, and other methods. Based on X-ray diffractometry, the crystalline quality of our films is equivalent to that of commercial films of similar thickness. We describe the novel growth apparatus used in this study and the properties of the films.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Trew, R. J., Yan, J -B. and Mock, P. M., Proc. IEEE 79, 598 (1991).Google Scholar
2. Davis, R. F., in The Physics and Chemistry of Carbides, Nitrides and Borides, Freer, R., ed., (Kluwer Academic Publishers: Dordrecht, the Netherlands, 1990) p. 589.CrossRefGoogle Scholar
3. Furumura, Y., Doki, M., Mieno, F., Eshita, T., Suzuki, T. and Maeda, M., in Proc. Tenth Intl. Coni on Chemical Vapor Deposition, ECS Proc. Vol. 87–8, Cullen, G. W., ed. (The Electrochemical Society, Inc.: Pennington, NJ, 1987) p. 435.Google Scholar
4. Li, Z. and Bradt, R. C., J. Amer. Cer. Soc. 70. 445 (1987).CrossRefGoogle Scholar
5. Touloukian, Y. S., Kirby, R. K., Taylor, R. E. and Lee, T. Y. R., Thermophysical Properties of Matter, Vol 13 (IFI/Plenum: New York, 1977).Google Scholar
6. Golecki, I., in Proc. Symp. on the Comparison of Thin Film Transistors and SOI Technologies, Mater. Res. Soc. Symp. Proc. Vol. 33, 3 (1984).Google Scholar
7. Nishino, S., Suhara, H., Ono, H. and Matsunami, H., J. Appl. Phys. 61, 4889 (1987).Google Scholar
8. Driscoll, W. G. and Vaughn, W., ed., Handbook of Optics (McGraw-Hill: New York, 1978), p. 7103.Google Scholar
9. Spitzer, W. G., Kleinman, D. A. and Frosch, C. J., Phys. Rev. 113, 133 (1959).Google Scholar
10. Golecki, I., Glass, H. L., Kinoshita, G. and Magee, T. J., Applications of Surface Science 9, 299 (1981).Google Scholar