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Epitaxial Growth of Thick Ag/Si(111) Films

Published online by Cambridge University Press:  26 February 2011

K.-H. Park ,
H.-S. Jin ,
L. Luo ,
W.M. Gibson ,
G.-C. Wang  and
T.-M. Lu
K.-H. Park
Affiliation:
Physics Department, Rensselaer Polytechnic Institute, Troy, N.Y. 12180
H.-S. Jin
Affiliation:
Physics Department, Rensselaer Polytechnic Institute, Troy, N.Y. 12180
L. Luo
Affiliation:
Physics Department, State University of New York, Albany, N.Y. 12222
W.M. Gibson
Affiliation:
Physics Department, State University of New York, Albany, N.Y. 12222
G.-C. Wang
Affiliation:
Physics Department, Rensselaer Polytechnic Institute, Troy, N.Y. 12180
T.-M. Lu
Affiliation:
Physics Department, Rensselaer Polytechnic Institute, Troy, N.Y. 12180
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Abstract

600∼4000Å thick Ag films grown on 3∼4· misoriented Si(111) substrates by molecular beam epitaxy (MBE) technique have been studied by using x-ray pole-figure analysis and MeV He+ Rutherford Backscattering Spectrometry (RBS)/channeling technique. X-ray pole-figure measurements revealed that despite the large lattice mismatch (∼25%) between Ag and Si, Ag films with epitaxial relationship Ag(111)//Si(111):Ag[011]//Si[011] were grown with a small quantity (15∼20%) of twin structure. The <111> axial channeling minimum yield (Xmin) is reduced at the Ag surface as the Ag film thickness increases. These films were thermally stable up to 500°C annealing but the twinning disappeared after annealing

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 102 , 1987 , 271
Copyright
Copyright © Materials Research Society 1988

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References

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