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EPITAXIAL GROWTH OF NICKEL SILICIDE LAYERS ON SILICON BY ELECTRON BEAM ANNEALING

Published online by Cambridge University Press:  28 February 2011

T. Inada ,
S. Tohyama ,
Y. Funaki  and
K. Itoh
T. Inada
Affiliation:
College of Engineering, Hosei University Kajino-cho, Koganei, Tokyo 184, Japan
S. Tohyama
Affiliation:
College of Engineering, Hosei University Kajino-cho, Koganei, Tokyo 184, Japan
Y. Funaki
Affiliation:
College of Engineering, Hosei University Kajino-cho, Koganei, Tokyo 184, Japan
K. Itoh
Affiliation:
College of Engineering, Hosei University Kajino-cho, Koganei, Tokyo 184, Japan
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Abstract

Epitaxial NiSi2 layers have been grown onto (100) and (111) Si substrates by multiple scan electron beam annealing. The formation and the composition of the silicides have been analyzed by Rutherford backscattering techniques and by electron diffractionobservation. The phase and the composition of the silicides depend on the power density of the electron beam. Under the optimum conditions, epitaxial NiSi2 layers with a high surface morphology can be grown. An attempt has been made to form crystalline Si—NiSi2—Si heterostructures and the preliminary data are also presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 56: Symposium H – Layered Structures and Epitaxy , 1985 , 171
Copyright
Copyright © Materials Research Society 1986

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