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Epitaxial Growth of Inp on Si by Mocvd

Published online by Cambridge University Press:  28 February 2011

F. Konushi ,
A. Seki ,
J. Kudo ,
H. Sato ,
S. Kakimoto ,
T. Fukushima ,
Y. Kubota  and
M. Koba
F. Konushi
Affiliation:
Central Research Laboratories, SHARP Corporation, 2613-1 Ichinomoto-cho, Tenri, Nara 632, JAPAN
A. Seki
Affiliation:
Central Research Laboratories, SHARP Corporation, 2613-1 Ichinomoto-cho, Tenri, Nara 632, JAPAN
J. Kudo
Affiliation:
Central Research Laboratories, SHARP Corporation, 2613-1 Ichinomoto-cho, Tenri, Nara 632, JAPAN
H. Sato
Affiliation:
Central Research Laboratories, SHARP Corporation, 2613-1 Ichinomoto-cho, Tenri, Nara 632, JAPAN
S. Kakimoto
Affiliation:
Central Research Laboratories, SHARP Corporation, 2613-1 Ichinomoto-cho, Tenri, Nara 632, JAPAN
T. Fukushima
Affiliation:
Central Research Laboratories, SHARP Corporation, 2613-1 Ichinomoto-cho, Tenri, Nara 632, JAPAN
Y. Kubota
Affiliation:
Central Research Laboratories, SHARP Corporation, 2613-1 Ichinomoto-cho, Tenri, Nara 632, JAPAN
M. Koba
Affiliation:
Central Research Laboratories, SHARP Corporation, 2613-1 Ichinomoto-cho, Tenri, Nara 632, JAPAN
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Abstract

The heteroepitaxy of InP on Si substrates was investigated using MOCVD. A thin GaAs intermediate layer was used to alleviate the 8.4% lattice mismatch between InP and Si. With the use of this intermediate layer, four inch size, single domain InP epilayer with small residual stress was reproducibly grown on off-(100) oriented Si substrates. The etch pit density (EPD) of as-grown InP layer was 5x107~1x108 cm-2 . The post growth annealing of this epilayer at 800~850ºC in aPH3+H2 ambient reduced EPD to 1~2x107 cm-2

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 116 , 1988 , 307
Copyright
Copyright © Materials Research Society 1988

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References

[1] Seki, A., Konushi, F., Kudo, J., Kakimoto, S., Fukushima, T., and Koba, M., Jpn. J. Appl. Phys. 26, L1587, (1987).CrossRefGoogle Scholar
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