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Epitaxial Growth of III-V Nanowires on Group IV Substrates

Published online by Cambridge University Press:  01 February 2011

Erik Bakkers ,
Magnus Borgstrom  and
Marcel Verheijen
Erik Bakkers
Affiliation:
erik.bakkers@philips.com, Philips Research Labs, System in Package, High Tech Campus 4, Eindhoven, 5656AE, Netherlands
Magnus Borgstrom
Affiliation:
magnus.borgstrom@ftf.lth.se, Philips Research Labs, Eindhoven, 5656AE, Netherlands
Marcel Verheijen
Affiliation:
m.a.verheijen@philhips.com, Philips Research Labs, Eindhoven, 5656AE, Netherlands
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Abstract

Semiconducting nanowires are emerging as a route to combine heavily mismatched materials. The high level of control on wire dimensions and chemical composition makes them promising materials to be integrated in future silicon technologies as well as to be the active element in optoelectronic devices.

In this article, we review the recent progress in epitaxial growth of nanowires on non-corresponding substrates. We highlight the advantage of using small dimensions to facilitate accommodation of the lattice strain at the surface of the structures. More specifically, we will focus on the growth of III–V nanowires on group IV substrates. This approach enables the integration of high-performance III–V semiconductors monolithically into mature silicon technology, since fundamental issues of III–V integration on Si such as lattice and thermal expansion mismatch can be overcome. Moreover, as there will only be one nucleation site per crystallite, the system will not suffer from antiphase boundaries.

Issues that affect the electronic properties of the heterojunction, such as the crystallographic quality and diffusion of elements across the heterointerface will be discussed. Finally, we address potential applications of vertical III–V nanowires grown on silicon.

Keywords

nanostructuresemiconductingstress/strain relationship
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1068: Symposium C – Advances in GaN, GaAs, SiC and Related Alloys on Silicon Substrates , 2008 , 1068-C02-04
Copyright
Copyright © Materials Research Society 2008

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References

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