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Epitaxial Growth of Al on Si By Gas-Temperature-Controlled CVD

Published online by Cambridge University Press:  25 February 2011

Tsukasa Kobayashi ,
Atsushi Sekiguchi ,
Naokichi Hosokawa  and
Tatsuo Asamaki
Tsukasa Kobayashi
Affiliation:
ANELVA Corporation, Yotsuya 5-8-1, Fuchu, Tokyo 183
Atsushi Sekiguchi
Affiliation:
ANELVA Corporation, Yotsuya 5-8-1, Fuchu, Tokyo 183
Naokichi Hosokawa
Affiliation:
ANELVA Corporation, Yotsuya 5-8-1, Fuchu, Tokyo 183
Tatsuo Asamaki
Affiliation:
ANELVA Corporation, Yotsuya 5-8-1, Fuchu, Tokyo 183
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Abstract

Epitaxial Al(111) film was deposited on Si(lll) by low-pressure chemical vapor deposition with the use of tri-isobutyl aluminum (TIBA) at the substrate temperature of 400 °C with the deposition rate of 0.9 μm/min. It was necessary for epitaxy to preheat the TIBA gas just before the deposition on the substrate. The preheat was made by gas-temperature-controller provided in the chamber. The film surface was so smooth that reflectance was higher than 90 % of Si and 20 ppm of O, C, and H. No hillock appeared on the film after 430 °C annealing for 40 min. The interface of Al and Si was rather stable so that no alloy penetration occured. The possibility of epitaxial growth of Al(100) on Si(100) was also shown.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 131: Symposium E – Chemical Perspectives of Microelectronic Materials I , 1988 , 363
Copyright
Copyright © Materials Research Society 1989

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References

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