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Epitaxial Grain Growth and Orientation Metastability in Heteroepitaxial Thin Films

Published online by Cambridge University Press:  21 February 2011

J. A. Floro  and
C. V. Thompson
J. A. Floro
Affiliation:
Department of Materials Science and Engineering, Massachussetts Institute of Technology, Cambridge, MA.
C. V. Thompson
Affiliation:
Department of Materials Science and Engineering, Massachussetts Institute of Technology, Cambridge, MA.
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Abstract

Conventional heteroepitaxial thin film growth may result in a film whose epitaxial orientation is metastable. One method of probing the relative energies of various film orientations is epitaxial grain growth. Epitaxial grain growth selects the orientation having lowest total free energy, including the free energy of both the film-substrate interface and the free surface of the film. Experimental examples of epitaxial grain growth in metal films on insulating substrates will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 187: Symposium J – Thin Film Structures and Phase Stability , 1990 , 273
Copyright
Copyright © Materials Research Society 1990

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