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Epitaxial Formation and Characterization of CeO2 Films

Published online by Cambridge University Press:  21 February 2011

Chunyan Tian ,
Yang Du  and
Siu-Wai Chan
Chunyan Tian
Affiliation:
Henry Krumb School of Mines, Columbia University, New York, NY 10027
Yang Du
Affiliation:
Henry Krumb School of Mines, Columbia University, New York, NY 10027
Siu-Wai Chan
Affiliation:
Henry Krumb School of Mines, Columbia University, New York, NY 10027
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Abstract

Epitaxial and textured ceria (CeO2) films have been prepared by electron beam evaporation on (001) LaAlO3, (11 02) sapphire, (001) Au, and (001) Pd substrates using either ceria or metallic cerium as sources. Both the deposition temperature and the deposition rate were varied to determine their effects on the microstructure of CeO2 films. It was found that CeO2 films grew epitaxially on sapphire within the deposition rate of 0.5A/s, starting at a temperature of 650°C, while for epitaxial CeO2 on LaAlO3, the deposition temperature could be as low as 600°C with a deposition rate as high as 1.0Å/s. On (001) Au substrate, only (001) textured film can be fabricated between 580°C and 700°C at a deposition rate from 0.3 to 1.0A/s. On (001) Pd substrates, mixtures of textured and epitaxial films were achieved at a deposition rate of 0.2–0.5Å/S in the 700°C to 750°C temperature range.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 355: Symposium B1 – Evolution of Thin-Film and Surface Structure and Morphology , 1994 , 513
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

1. Sørensen, O.T., J. Solid State Chem, 18, 217 (1976).Google Scholar
2. Ruhler, M., Evens, A. G., Ashby, M. F., Hirth, J. P., Metal Ceramic Interfaces, Acta-Scripta Metallurgica Proceedings Series, Vol. 4, Pergaman Press 1990.Google Scholar
3. Inoue, T., Osonoe, M., Tohda, H., and Hiramatsu, M., J Appl. Phys, 69(12), 8313 (1991).Google Scholar
4. Venables, J. A. and Price, G. L., in Epitaxial Growth Part B, ed. Matthews, J. W., Academic Press 1975.Google Scholar
5. Flynn, C. P., J Phys., F18, L195 (1988).Google Scholar
6. Wu, X. D., Dye, R. C., Muenchausen, R. E., FoItyn, S. R., Maley, M., Rollett, A. D., Garcia, A. R. and Nopar, N. S. Appl. Phys. Lett, 58, 191 1991.Google Scholar
7. Wyckoff, R. W. G., Crystal Structures, 2nd ed., Vol. 2, Interscience Publisher, 1964.Google Scholar
8. Lu, Z., Feigelson, R. S., Route, R. K., DiCarolis, S. A., Hiskes, R., and Jacowitz, R. D.. J. Crystal Growth, 128 (1993) 788.Google Scholar