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Epitaxial Chemically Derived Lanthanum Aluminate Films for Ba2YCu3O7−x Devices

Published online by Cambridge University Press:  15 February 2011

Man Faing  and
Michael J. Cima
Man Faing
Affiliation:
Ceramics Processing Research Laboratory, Massachusetts Institute of Technology, Cambridge, MA.
Michael J. Cima
Affiliation:
Ceramics Processing Research Laboratory, Massachusetts Institute of Technology, Cambridge, MA.
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Abstract

Lanthanum aluminate (LaAlO3) has been used as a substrate material for depositing Ba2YCu3O7−x (YBCO) films. In the present study, chemically derived epitaxial LaAlO3 thin films were used for depositing epitaxial YBCO films. These epitaxial LaAlO3 films were deposited on both (100) SrTiO3 and (100) LaAlO3 single crystal substrates by pyrolysis of a mixed nitrate precursor. Crystallization of LaAlO3 on lattice-Matched substrates occurs at below 650°C, whereas crystallization on non lattice-Matched substrates occurs at much higher temperature. The average surface roughness of these LaAlO3 films can be as low as 7Å. The YBCO films derived from metalorganic deposition of metal trifluoroacetate precursors were deposited on these epitaxial LaAlO3 films on SrTiO3 substrates. The resultant YBCO films have critical current densities of > 2 × 106 A/cm2 at 77K and zero field. Transmission electron microscopy of these films shows that they are highly epitaxial yet have pore of about 15–30 nm in size. Chemically derived LaAlO3 films also were used to planarize stepped substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 317: Symposium B – Mechanisms of Thin Film Evolution , 1993 , 547
Copyright
Copyright © Materials Research Society 1994

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References

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