Hostname: page-component-77c89778f8-n9wrp Total loading time: 0 Render date: 2024-07-17T17:56:10.856Z Has data issue: false hasContentIssue false
  • English
  • Français

Enhancement of Oxygen Precipitation in Quenched Czochralski Silicon Crystals

Published online by Cambridge University Press:  25 February 2011

A. Hara ,
T. Fukuda ,
I. Hirai  and
A. Ohsawa
A. Hara
Affiliation:
Fujitsu Laboratories Ltd., Kamikodanaka, Nakahara-ku, Kawasaki, Japan
T. Fukuda
Affiliation:
Fujitsu Laboratories Ltd., Kamikodanaka, Nakahara-ku, Kawasaki, Japan
I. Hirai
Affiliation:
Fujitsu Laboratories Ltd., Kamikodanaka, Nakahara-ku, Kawasaki, Japan
A. Ohsawa
Affiliation:
Fujitsu Laboratories Ltd., Kamikodanaka, Nakahara-ku, Kawasaki, Japan
Get access

Abstract

We studied oxygen precipitation in quenched Czochralski silicon crystals. The larger the cooling rate and the higher the quenching temperature, the more oxygen precipitated. The defects enhancing oxygen precipitation are eliminated by annealing above 900°C. The defects are formed and removed repeatedly by quenching and slow cooling. We think that the aggregation of vacancies is related to those defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 969
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Shimanuki, Y., Furuya, H., Suzuki, I., and Murai, M., Jpn. J. Appl. Phys. 24, 1594 (1985)Google Scholar
2 Fraundorf, G., Fraundorf, P., Craven, R. A., Frederick, R. A., Moody, J. W., and Shaw, R. W., J. Electrochem. Soc. 132. 1701 (1985)Google Scholar
3 Harada, H., Abe, T., and Chikawa, J., in “Semiconductor Silicon 1986”, edited Huff, H. R., Kolbesen, B., and Abe, T. (Electrochem Society, Pennington, N. J. 1986), p. 76 Google Scholar
4 Kirscht, A. F.-G., Richter, H., Schmalz, K., Bertoldi, R., and Klose, H., in “Semiconductor Silicon 1986”, edited Huff, H. R., Kolbesen, B., and Abe, T. (Electrochem Society, Pennington, N. J. 1986), p. 903 Google Scholar
5 Damask, A. C. and Dienes, G. J., Point Defects in Metals (Gordon and Breach, New York, 1963).Google Scholar
6 Watkins, G. D., Deep Level in Semiconductors, edited by Pantelides, S. T. (Gordon and Breach, New York, 1986), Chap. 3, p. 147.Google Scholar
7 Tan, T. Y. and Rung, C. Y., J. Appl. Phys. 59, 917 (1986).Google Scholar
8 Rogers, W. B., Massoud, H. Z., Fair, R. B., Gosele, U. M., Tan, T. Y., Rozgonyi, G. A., J. Appl. Phys. 65, 4215 (1989)Google Scholar