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Enhancement of Grain Growth In Ultra-Thin Germanium Films By Ion Bombardment

Published online by Cambridge University Press:  26 February 2011

Harry A. Atwater ,
Henry I. Smith  and
Carl V. Thompson
Harry A. Atwater
Affiliation:
Massachusetts Institute of Technology Cambridge, Mass. 02139
Henry I. Smith
Affiliation:
Massachusetts Institute of Technology Cambridge, Mass. 02139
Carl V. Thompson
Affiliation:
Massachusetts Institute of Technology Cambridge, Mass. 02139
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Abstract

We report the enhancement of grain growth in 50 nm-thick Ge films during Ge ion bombardment, or self-implantation, at 500-600 ° C. Conventional and cross-sectional transmission electron microscopy (TEM) indicate that normal grains grow to a columnar structure at considerably lower temperatures than during ordinary thermal annealing. Furthermore, self-implantation-enhanced normal grain growth is found to be very weakly dependent on temperature. The time dependence and temperature dependence of grain growth during self-implantation were compared with data for thermal annealing experiments and suggest that the enhancement results from elastic collisions between ions and atoms located at the grain boundaries.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 51: Symposium A – Beam-Solid Interactions and Phase Transformations , 1985 , 337
Copyright
Copyright © Materials Research Society 1985

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References

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