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Enhanced Relaxation of Strained GexSi1−x Layers Induced by Co/GexSi1−x Thermal Reaction

Published online by Cambridge University Press:  03 September 2012

M.C. Ridgway ,
M.R. Rao  and
J.-M. Baribeau
M.C. Ridgway
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra, Australia
M.R. Rao
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra, Australia
J.-M. Baribeau
Affiliation:
Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Canada
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Abstract

Silicide formation on strained GexSilx layers by the thermally-induced metal/GexSi1−x reaction results in enhanced relaxation of the underlying strained layer. Silicide formation on an amorphous layer is a potential means of decreasing processing temperatures, increasing reacted-layer/GexSi1−x interface planarity and hence, decreasing strained layer relaxation. For the present report, the thermally-induced Co/Ge.17Si.83 reaction on crystalline and amorphous substrates at temperatures of 500-600°C has been compared. Though the rate of silicide formation increased with amorphous substrates, strained layer relaxation was not inhibited.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 320: Symposium D – Silicides, Germanides, and Their Interfaces , 1993 , 329
Copyright
Copyright © Materials Research Society 1994

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References

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