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Enhanced Optical Emission from GaN Film Grown on Composite Intermediate Layers

Published online by Cambridge University Press:  10 February 2011

Xiong Zhang ,
Soo-Jin Chua ,
Peng Li  and
Kok-Boon Chong
Xiong Zhang
Affiliation:
Center for Optoelectronics, Department of Electrical Engineering National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260, elezx@nus.edu.sg
Soo-Jin Chua
Affiliation:
Center for Optoelectronics, Department of Electrical Engineering National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260, elezx@nus.edu.sg
Peng Li
Affiliation:
Center for Optoelectronics, Department of Electrical Engineering National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260, elezx@nus.edu.sg
Kok-Boon Chong
Affiliation:
Center for Optoelectronics, Department of Electrical Engineering National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260, elezx@nus.edu.sg
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Abstract

GaN films have been grown on silicon-(001) substrate with specially designed composite intermediate layers consisting of an ultra-thin amorphous silicon layer and a GaN/AlxGa1−xN (x=0.2) multilayered buffer by metal-organic chemical vapor deposition and characterized by photoluminescence and x-ray diffraction spectroscopy. It was found that the GaN films grown on the composite intermediate layers gave comparable or slightly stronger optical emission than those grown on sapphire substrate under identical reactor configuration. Moreover, the full width at half maximum for the GaN band-edge-related emission is 40 meV at room temperature. This fact indicates that, by using the proposed composite intermediate layers, the crystalline quality of GaN-based nitride grown on a silicon substrate can be significantly improved.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 572: Symposium Y – Wide-Bandgap Semiconductors for High-Power, High Frequency… , 1999 , 301
Copyright
Copyright © Materials Research Society 1999

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References

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