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Enhanced Electrical properties in Mn-doped Bi3.25La0.75Ti3O12 thin films

Published online by Cambridge University Press:  26 February 2011

Sushil Kumar Singh  and
Hiroshi Ishiwara
Sushil Kumar Singh
Affiliation:
singh@neuro.pi.titech.ac.jp, Tokyo Institute of Technology, Interdisciplinary Graduate School of Science and Engineering, 4259-J2-67 Nagatsuda, Midori-ku, 226-8503, Yokohama, N/A, N/A, Japan, 0081-45-924-5874, 0081-45-924-5147
Hiroshi Ishiwara
Affiliation:
ishiwara@pi.titech.ac.jp
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Abstract

Mn-doped Bi3.25La0.75Ti3O12 (BLT) thin films were fabricated by depositing sol-gel solutions on Pt/Ti/SiO2/Si <100> substrates. The surface morphology and ferroelectric properties of Mn-doped BLT films depend upon the orientation of the films. Small amount of Mn-doping in BLT films influences the ferroelectric properties of the films, that is, it enhances the remanent polarization and reduces the coercive field. The 1% Mn-doped BLT films show enhanced remanent polarization and reduced the coercive field by about 22%. To the contrary, Mn-doping more than 1% decreases polarization gradually. Mn-doping significantly improves the fatigue resistance of BLT films. The reduced polarization in the 3.3% Mn-doped thin film recovers during switching cycles higher than 5 × 105. Under high switching field, the probability of field-assisted unpinning of domains is expected to be high and this may be the main cause for increase in polarization after 5 × 105 in the 3.3% Mn-doped BLT film.

Keywords

ferroelectricelectrical propertiesfatigue
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 902: Symposium T – Ferroelectric Thin Films XIII , 2005 , 0902-T03-52
Copyright
Copyright © Materials Research Society 2006

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