Hostname: page-component-848d4c4894-ttngx Total loading time: 0 Render date: 2024-05-12T01:38:00.921Z Has data issue: false hasContentIssue false
  • English
  • Français

Enhanced Boron Diffusion in Amorphous Silicon

Published online by Cambridge University Press:  17 March 2011

J.M. Jacques ,
N. Burbure ,
K.S. Jones ,
M.E. Law ,
L.S. Robertson ,
D.F. Downey ,
L.M. Rubin ,
J. Bennett ,
M. Beebe  and
M. Klimov
J.M. Jacques
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
N. Burbure
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
K.S. Jones
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
M.E. Law
Affiliation:
Department of Electrical and Computer Engineering, University of Florida, Gainesville, FL 32611
L.S. Robertson
Affiliation:
Texas Instruments Inc., Dallas, TX 75081
D.F. Downey
Affiliation:
Varian Semiconductor Equipment Associates, Gloucester, MA 01930
L.M. Rubin
Affiliation:
Axcelis Technologies, Beverly, MA 01915
J. Bennett
Affiliation:
International SEMATECH, Austin, TX 78741
M. Beebe
Affiliation:
International SEMATECH, Austin, TX 78741
M. Klimov
Affiliation:
AMPAC/MCF, University of Central Florida, Orlando, FL 32826
Get access

Abstract

In prior works, we demonstrated the phenomenon of fluorine-enhanced boron diffusion within self-amorphized silicon. Present studies address the process dependencies of low temperature boron motion within ion implanted materials utilizing a germanium amorphization. Silicon wafers were preamorphized with either 60 keV or 80 keV Ge+ at a dose of 1×1015 atoms/cm2. Subsequent 500 eV, 1×1015 atoms/cm211B+ implants, as well as 6 keV F+ implants with doses ranging from 1×1014 atoms/cm2 to 5×1015 atoms/cm2 were also done. Furnace anneals were conducted at 550°C for 10 minutes under an inert N2 ambient. Secondary Ion Mass Spectroscopy (SIMS) was utilized to characterize the occurrence of boron diffusion within amorphous silicon at room temperature, as well as during the Solid Phase Epitaxial Regrowth (SPER) process. Amorphous layer depths were verified through Cross-Sectional Transmission Electron Microscopy (XTEM) and Variable Angle Spectroscopic Ellipsometry (VASE). Boron motion within as-implanted samples is observed at fluorine concentrations greater than 1×1020 atoms/cm3. The magnitude of the boron motion scales with increasing fluorine dose and concentration. During the initial stages of SPER, boron was observed to diffuse irrespective of the co-implanted fluorine dose. Fluorine enhanced diffusion at room temperature does not appear to follow the same process as the enhanced diffusion observed during the regrowth process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 810: Symposium C – Silicon Front-End Junction Formation-Physics and Technology , 2004 , C10.3
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Downey, D.F., Chow, J.W., Ishida, E., and Jones, K.S., Appl. Phys. Lett. 73, 1263 (1998).Google Scholar
2. Ohyu, K., Itoga, T., and Natsuaki, N., 20th Symposium on Ion Implantation & Submicron Fabrication, RIKEN, 1989, pp. 149–152.Google Scholar
3. Ohyu, K., Itoga, T., and Natsuaki, N., Japanese J. Appl. Phys., Part 1 29, 457 (1990).Google Scholar
4. Jacques, J.M., Robertson, L.S., Law, M.E., Jones, K.S., Rendon, M.J., and Bennett, J., Mater. Res. Soc. Symp. Proc. 717, C4.6.1 (2002).Google Scholar
5. Jacques, J.M., Robertson, L.S., Jones, K.S., Law, M.E., Rendon, M., and Bennett, J., Appl. Phys. Lett. 82, 3469 (2003).Google Scholar
6. Ziegler, J.F. and Biersack, J.P.. The Stopping and Range of Ions in Matter (SRIM-2000.4). Maryland: IBM Co., 1999.Google Scholar
7. Frentrup, W. and Mertens, A., Physica B 208 & 209, 389 (1995).Google Scholar
8. Wong, S.P., Poon, M.C., Kwok, H.L., and Lam, Y.M., J. Electrochem. Soc. 133, 2172 (1986).Google Scholar
9. Suni, I., Goltz, G., Grimaldi, M.G., Nicolet, M.-A., and Lau, S.S., Appl. Phys. Lett. 40, 269 (1982).Google Scholar
10. Suni, I., Goltz, G., Nicolet, M.-A., and Lau, S.S., Thin Solid Films 93, 171 (1982).Google Scholar
11. Suni, I., Shreter, U., Nicolet, M.-A., and Baker, J.E., J. Appl. Phys. 56 (2), 273 (1984).Google Scholar
12. Faure, J., Claverie, A., Laanab, L., and Bonhomme, P.. Mat. Sci. and Eng., B22, 128 (1994).Google Scholar