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Energy Band Offsets at a Ga2O3(Gd2O3)-GaAs Interface

Published online by Cambridge University Press:  10 February 2011

T. S. Lay ,
M. Hong ,
J. Kwo ,
J. P. Mannaerts ,
W. H. Hung  and
D. J. Huang
T. S. Lay
Affiliation:
Institute of Electro-Optical Engineering, National Sun Yat-Sen University, Taiwan
M. Hong
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ07974
J. Kwo
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ07974
J. P. Mannaerts
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ07974
W. H. Hung
Affiliation:
Synchrotron Radiation Research Center, Hsinchu, Taiwan
D. J. Huang
Affiliation:
Synchrotron Radiation Research Center, Hsinchu, Taiwan
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Abstract

We report the energy band offsets at a Ga2O3(Gd2O3)-GaAs interface. The valence-band offset (ΔEv) is ∼ 2.6 eV, measured by soft x-ray photoemission spectroscopy. Analysis of the current-voltage characteristics of a Pt-Ga2O3(Gd2O3)-GaAs MOS (metal-oxide-semiconductor) structure, which are dominated by Fowler-Nordheim tunneling, reveals a conduction-band offset (ΔEC) ∼ 1.4 eV at the Ga2O3(Gd2O3)-GaAs interface and an electron effective mass (m*) ∼ 0.29 me of the Ga2O3(Gd2O3) film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 573: Symposium Z – Compound Semiconductor Surface Passivation and Novel Device.. , 1999 , 131
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

1. Hong, M., Passlack, M., Mannerts, J. P., Kwo, J., Chu, S. N. G., Moriya, N., Hou, S. Y., and Fratello, V. J., J. Vac. Sci. Technol. B14, 2297 (1996).Google Scholar
2. Hong, M., Ren, F., Kuo, J. M., Hobson, W. S., Kwo, J., Mannaerts, J. P., Lothian, J. R., and Chen, Y. K., J. Vac. Sci. Technol. B16, 1398 (1998).Google Scholar
3. Ren, F., Hong, M., Hobson, W. S., Kuo, J. M., Lothian, J. R., Mannaerts, J. P., Kwo, J., Chen, Y. K., and Cho, A. Y., IEDM technical digest, 943 (1996).Google Scholar
4. Hong, M., Mannaerts, J. P., Marcus, M. A., Kwo, J., Sergent, A. M., Chou, L. J., Hsieh, K. C., and Cheng, K. Y., J. Vac. Sci. Technol. B16, 1395 (1998).Google Scholar
5. Muller, R.S., and Kamins, T.I., Device electronics for integrated circuits, (John Wiley & Sons, New York, 1977), p. 32.Google Scholar
6. Lewwicki, G. and Maserjian, J., J. Appl. Phys., 46, 3032 (1975).Google Scholar
7. Sze, S.M., Physics of semiconductor devices, 2nded., (John Wiley & Sons, New York, 1981), p. 403.Google Scholar
8. The Ga 3d binding energy, which is associated with Ga2o3, is ∼2eV higher than that of GaAs. Handbook of x-ray photoelectron spectroscopy (Perkin-Elmer Corporation, Eden Prairie, 1992).Google Scholar