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Energetics of Interstitial Hydrogen and Hydrogen Diffusion in Realistic Models of a-Si:H

Published online by Cambridge University Press:  01 February 2011

P. A. Fedders
P. A. Fedders*
Affiliation:
Department of Physics, Washington University, St. Louis, Mo 63130
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Abstract

In order to determine the mechanism or mechanisms of hydrogen transport in a-Si:H one must identify the reactions that bring deeply bonded H (on dangling bonds) to the transport band which is some form of interstitial hydrogen. Further, one must have reliable estimates of the energy difference between these deep states and transport states as well as the barrier energies among transport sites. In this paper we consider all of these ingredients in order to partially explain how hydrogen migrates in a-Si:H.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 715: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2002 , 2002 , A1.3
Copyright
Copyright © Materials Research Society 2002

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