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Energetics of Impurity-Free Vacancy-Mediated Disordering of AlGaAs/GaAs Superlattices

Published online by Cambridge University Press:  22 February 2011

B.L. Olmsted  and
S.N. Houde-Walter
B.L. Olmsted
Affiliation:
The Institute of Optics, University of Rochester, Rochester, New York 14627
S.N. Houde-Walter
Affiliation:
The Institute of Optics, University of Rochester, Rochester, New York 14627
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Abstract

We report on a systematic study of impurity-free Al-Ga interdiffusion in AlGaAs/GaAs superlattices in sealed ampoules. Three ambients were explored: along the Ga-rich solidus, with no excess Ga or As in the evacuated ampoule, and with excess As less than that required to reach the As-rich solidus limit. In each of the ambients the Arrhenius dependence of the Al-Ga interdiffusion coefficient is represented by a single activation energy throughout the temperature range investigated (700-1050 °C). These results were obtained using four structures with superlattice periods ranging from 90 to 520 Å. Excellent agreement was obtained between the Al-Ga interdiffusion coefficients measured using superlattices on Sidoped and undoped GaAs substrates. With proper normalization to a constant As overpressure, PAs4 = 1 atm, the Ga- and As-rich activation energies are 3.26±0.12 eV and 4.91±0.23 eV, respectively. These activation energies are in the range predicted for Al-Ga interdiffusion mediated by group Ill-vacancy second nearest-neighbor hopping. The increase in energy when going from Ga- to As-rich conditions is attributed to a shift in the Fermi-level position towards the valence band with an increase in the ionized group Ill-vacancy concentration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 300: Symposium D1 – III-V Electronic and Photonic Device Fabrication and Performance , 1993 , 391
Copyright
Copyright © Materials Research Society 1993

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References

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