Hostname: page-component-848d4c4894-r5zm4 Total loading time: 0 Render date: 2024-06-28T00:24:23.659Z Has data issue: false hasContentIssue false
  • English
  • Français

Emission and Processing Requirements for Carbide Films on Mo Field Emitters

Published online by Cambridge University Press:  10 February 2011

W. A. Mackie ,
Tianbao Xie ,
M.R. Matthews  and
P. R. Davis
W. A. Mackie
Affiliation:
Linfield Research Institute, 900 S.E. Baker Street, McMinnville, OR 97128-6894, billm@linfield.edu
Tianbao Xie
Affiliation:
Linfield Research Institute, 900 S.E. Baker Street, McMinnville, OR 97128-6894
M.R. Matthews
Affiliation:
Linfield Research Institute, 900 S.E. Baker Street, McMinnville, OR 97128-6894
P. R. Davis
Affiliation:
Linfield Research Institute, 900 S.E. Baker Street, McMinnville, OR 97128-6894
Get access

Abstract

We have been working for many years on electron emission and surface properties of transition metal carbides. These studies have covered field, photo, and thermionic emission from bulk carbides as well as field and photo emission from carbide coatings and films on various substrates. Thin film carbide overcoatings have also been used on field emitter arrays of both Mo and Si. These unique carbide materials have electron emission properties making them attractive candidates for several applications. Uses for these carbides include FEA video displays, microwave applications, high current and small spot electron sources (e.g. accelerators and FELs), and cold cathodes for operation at tube pressures and in poor vacuums (e.g. FEAs, vacuum detectors, and neutralizing beams for ion thrusters).

We report here on one aspect of our current research which deals with electron emission of ZrC films coating single Mo field emitters. The relevant application is Spindt-type field emitter arrays. Processing steps are evaluated showing the need for a clean substrate. After deposition treatments are also investigated. Emission degradation has been noted after exposure to air and we report on successful use of a hydrogen atmosphere to reverse those adverse effects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 509: Symposium C – Materials Issues in Vacuum Microelectronics , 1998 , 173
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Mackie, W.A. and Davis, P.R., IEEE - Transactions on Electron Devices, 36 (1) January, 1989.Google Scholar
2 Mackie, W.A., Morrissey, J.L., Hinrichs, C.H., and Davis, P.R., Journal of Vacuum Science and Technology A, 10 (4) Part III, July/Aug. 1992.Google Scholar
3 Mackie, W.A., Anderson, M.A., and Davis, P.R., (in preparation for submission).Google Scholar
4 Mackie, W.A., Morrissey, J.L., Hinrichs, C.H., Hartman, R.L., and Davis, P.R., in Tri-Service/NASA Cathode Workshop, 1992 Proceedings, eds. Washington, J.W. Gibson: Palisades Institute for Research Services, Inc. (1992).Google Scholar
5 Mackie, W.A., Hartman, R.L., and Davis, P.R., Applied Surface Science, 67, 29–35 (1993).Google Scholar
6 Mackie, W.A., Tianbao Xie, and Davis, P.R., Journal of Vacuum Science and Technology, 13 (6), 2459–63 (1995).Google Scholar
7 Mackie, W.A., Xie, T., Blackwood, J.E., Williams, S.C., & Davis, P.R., submitted to Journal of Vacuum Science and Technology, July 1996.Google Scholar
8 Mackie, W.A., Xie, Tianbao, & Davis, P.R., paper delivered at ICOPS-97, San Diego, CA, May (1997).Google Scholar
9 Mackie, W. A., Xie, Tianbao, Blackwood, J.E., & Davis, P.R., paper delivered at ICOPS-97, San Diego, CA, May (1997).Google Scholar
10 Mackie, W.A. and Hinrichs, C.H., Journal of Crystal Growth, 87, 101–106 (1988).Google Scholar
11 High stoichiometry material obtained from Applied Physics Technologies, 5882 Booth Bend Rd., McMinnville, OR 97128.Google Scholar