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Elevated Temperature Silicon Carbide Chemical Sensors

Published online by Cambridge University Press:  10 February 2011

M. A. George ,
M. A. Ayoub ,
D. Ila  and
D. J. Larkin
M. A. George
Affiliation:
Department of Chemistry, University of Alabama in Huntsville
M. A. Ayoub
Affiliation:
Department of Chemistry, University of Alabama in Huntsville
D. Ila
Affiliation:
Center for Irradiation of Materials, Alabama A° 1999
D. J. Larkin
Affiliation:
NASA Lewis Research Center
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Abstract

In this study, the (I-V) properties of the sensors were measured as a function of hydrogen, propylene and methane exposure at temperatures up to 400° C and sensor responses were observed for each gas. The response to hydrogen and propylene had a rapid increase and leveling off of the current followed by the subsequent decrease to the baseline when the gas was switched off. However, exposure to methane resulted in a rapid spike in the current followed by a gradual increase with continued exposure. X-ray photoelectron (XPS) studies of methane exposed SiC sensors revealed that this behavior is attributed to the oxidation of methane at the Pd surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 572: Symposium Y – Wide-Bandgap Semiconductors for High-Power, High Frequency… , 1999 , 123
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

1. Shenai, K., Scott, R.S., Baliga, B.J., IEEE trans. Electron. Dev. 36(1989)1811.10.1109/16.34247Google Scholar
2. Waldrop, J.R. and Grant, R.W., Appl. Phys. Lett., 62(1993)2685.10.1063/1.109257Google Scholar
3. Hunter, G.W., Neudeck, P.G., Jefferson, G.D., Madzsar, G.C., Liu, C.C. and Wu, Q.H., Report E-7773 NASA, (1993).Google Scholar
4. Hunter, G.W., Neudeck, P.G., Liu, C.C. and Wu, Q.H., Conference on advanced Earth- To-Orbit Propulsion Technology, (1994).Google Scholar
5. Chen, L.-Y, Hunter, G.W., Neudeck, P.G., Knight, D., Liu, C.C. and Wu, Q.H., Proceedings 190th Meeting of Electrochemical society (1996).Google Scholar
6. Spetz, L. A., Baranzahi, A., Tobias, P., Lundstrom, I., High temperature sensors based on metal-insulator-silicon carbide devices, Physica Status Solidi (A) Applied Research, v 162, 1 (1997)493–511.10.1002/1521-396X(199707)162:1<493::AID-PSSA493>3.0.CO;2-C3.0.CO;2-C>Google Scholar
7. Muller, G., Krotz, G., Niemann, E., SiC for sensors and high-temperature electronics, Sensors and Actuators, A, 43, 1–3 (1994) 259–268Google Scholar
8. Erdöhelyi, A., Cserényi, J., Papp, E. and Solymosi, F., Applied Catalysis A, 108 (1994) 205–219.10.1016/0926-860X(94)85071-2Google Scholar
9. Chen, J.-J. and Winograd, N., Surface Science 314 (1994) 188–200.10.1016/0039-6028(94)90006-XGoogle Scholar
10. Bhattacharya, A.K., Breach, J.A., Chand, S., Ghorai, D. K., Hartridge, A., Keary, J. and Mallick, K.K., Applied Catalysis A: General, 80 (1992)L1–L5.10.1016/0926-860X(92)85103-IGoogle Scholar
11. Lisowski, W., Surface Science, 312 (1994) 157–166.10.1016/0039-6028(94)90813-3Google Scholar