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Electron-Spin-Resonance Investigation of Laser Crystallized Polycrystalline Silicon

Published online by Cambridge University Press:  01 February 2011

K. Brendel ,
N. H. Nickel ,
K. Lips  and
W. Fuhs
K. Brendel
Affiliation:
Hahn-Meitner-Institut Berlin, Silicon Photovoltaics Kekuléstr. 5, D-12489 Berlin, Germany
N. H. Nickel
Affiliation:
Hahn-Meitner-Institut Berlin, Silicon Photovoltaics Kekuléstr. 5, D-12489 Berlin, Germany
K. Lips
Affiliation:
Hahn-Meitner-Institut Berlin, Silicon Photovoltaics Kekuléstr. 5, D-12489 Berlin, Germany
W. Fuhs
Affiliation:
Hahn-Meitner-Institut Berlin, Silicon Photovoltaics Kekuléstr. 5, D-12489 Berlin, Germany
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Abstract

Doped and undoped laser crystallized polycrystalline silicon was investigated by electron-spin-resonance experiments. In P-doped samples two resonance are detected at g = 2.0053 and g = 1.998 which are due to silicon dangling bonds and conducting electrons, respectively. After crystallization a large amount of hydrogen remains in the samples. This residual hydrogen can be activated to reduce the spin density by passivating dangling-bonds. The temperature dependent investigation of the conducting electron resonance reveals that the susceptibility can be described by the sum of Pauli and Curie paramagnetism. The data are discussed in terms of models developed for single crystal and microcrystalline silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 762: Symposium A – Amorphous and Nanocrystalline Silicon-Based Films – 2003 , 2003 , A2.3
Copyright
Copyright © Materials Research Society 2003

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