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Electronic Structure and Thermoelectric Property of Skutterudite CoSb3

Published online by Cambridge University Press:  21 March 2011

Kenji Koga
Affiliation:
Faculty of Engineering, Yamaguchi University Tokiwadai 2-16-1, Ube 755-8611, Japan E-mail b5229@stu.cc.yamaguchi-u.ac.jp, Phone/Fax +81 836 85 9622
Koji Akai
Affiliation:
Faculty of Engineering, Yamaguchi University Tokiwadai 2-16-1, Ube 755-8611, Japan E-mail b5229@stu.cc.yamaguchi-u.ac.jp, Phone/Fax +81 836 85 9622
Kazunori Oshiro
Affiliation:
Faculty of Engineering, Yamaguchi University Tokiwadai 2-16-1, Ube 755-8611, Japan E-mail b5229@stu.cc.yamaguchi-u.ac.jp, Phone/Fax +81 836 85 9622
Mitsuru Matsuura
Affiliation:
Faculty of Engineering, Yamaguchi University Tokiwadai 2-16-1, Ube 755-8611, Japan E-mail b5229@stu.cc.yamaguchi-u.ac.jp, Phone/Fax +81 836 85 9622
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Abstract

Electronic structure of CoSb3 is calculated by means of full-potential linearlized augmented plane wave (FLAPW) method with the generalized gradient approximation (GGA). The calculated band gap of CoSb3 with the consideration of spin-orbit (SO) interaction is 110meV, which is about a half of that without SO interaction. It is found that simple four bands model with the Kane's nonparabolic valence and conduction bands, two parabolic conduction bands describe calculated electronic structure near band edge very well. Using the simple four bands model, thermoelectric properties are calculated and are discussed. Larger band gap, e.g., Eg=200meV with the microscopic mechanism such as phonon scattering yields a fair agreement with the experiment in a wide range of temperature.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

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References

REFERENCES

1. Mastubara, K., Iyanaga, T., Tsubouchi, T., Kisimoto, K., and Koyanagi, T., in Proceedings of the 13th International Conference on Thermoelectrics, Kansas City, MO, 1994, AIP Conf. Proc. No. 316, edited by Mathiprakasam, B. and Heenan, P. (AIP, New York, 1995), pp. 226229 Google Scholar
2. Arushanov, E., Fess, K., Kaefer, W., Kloc, Ch., and Bucher, E. Phys, Rev, B 56, 1911 (1997)Google Scholar
3. Singh, D. J. and Pickett, W. E., Phys, Rev, B 50, 11235 (1994)Google Scholar
4. Sofo, J. O. and Mahan, G. D., Phys, Rev, B 58, 15620 (1998)Google Scholar
5. Akai, K. and Matsuura, M., unpublished.Google Scholar
6. Schmidt, Th., Kliche, G., and Lutz, H. D., Acta Crystalogr. Sect. C: Crst. Struct. Commun 43, 1678 (1987)Google Scholar
7. Blaha, P., Schwars, K., and Luitz, J., program package WIEN97, Technical University of Vienna (1997)Google Scholar
8. Perdew, J. P., Burke, S., and Ernzerhof, M., Phys. Rev. Lett. 77, 3865 (1996)Google Scholar
9. Nag, B. R., “Electron Transport in Compound Semiconductor” (Springer-Verlag, Berlin, Heiderberg, New York, 1980)Google Scholar
10. Caillat, T., Borschshevsky, A., and Fleural, J. P., J. Appl. Phys. 80, 4442 (1996)Google Scholar
11. Ackerman, J., and Wold, A., J Phys. Chem. Solids. 38, 1013 (1977)Google Scholar
12. Kliche, G., and Lutz, H. D., Infrared Phys. 24, 171 (1984)Google Scholar