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Electronic States of Grain Boundaries in Bicrystal Silicon*

Published online by Cambridge University Press:  15 February 2011

C. M. Shyu ,
L. J. Cheng  and
K. L. Wang
C. M. Shyu
Affiliation:
Jet Propulsion Laboratory, California Institute of Technology 4800 Oak Grove Drive, Pasadena, California, 91109, USA
L. J. Cheng
Affiliation:
Jet Propulsion Laboratory, California Institute of Technology 4800 Oak Grove Drive, Pasadena, California, 91109, USA
K. L. Wang
Affiliation:
Department of Electrical Engineering, University of California,Los Angeles, California, 90024, USA
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Abstract

Electronic states at a 20° symmetrical(100) tilt boundary in p-type silicon were studied using deep level transient spectroscopy (DLTS) and other electrical measurements. The data can be explained with a model in which the local barrier height at the grain boundary varies on a scale much smaller than the boundary plane (∼I mm2) under study. Based on a relationship between the carrier capture cross section and energy level deduced from the experimental data, we have been able to calculate the distribution of the density of states in the energy bandgap at the boundary, which contains two groups of continuously distributed states; a major one whose density of states increases monotonically with the position of the state from the valance band, and a minor narrow one whose density of states is centered at Ev,+0.20 eV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 14: Symposium B – Defects in Semiconductors II , 1982 , 363
Copyright
Copyright © Materials Research Society 1982

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Footnotes

**

This will be part of Shyu's Ph.D. dissertation in the Department of Electrical Engineering, University of California at Los Angeles.

*

The research described in this paper was carried out for the Flat-Plate Solar Array Project, Jet Propulsion Laboratory, California Institute of Technology and was sponsored by the U.S. Department of Energy through an agreement with NASA.

References

REFERENCES

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