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Electronic Properties of Grain Boundaries in GaAs: A Study of Oriented Bicrystals Prepared by Epitaxial Lateral Overgrowth

Published online by Cambridge University Press:  15 February 2011

Jack P. Salerno ,
R. W. Mcclelland ,
J. G. Mavroides ,
John C. C. Fan  and
A. F. Witt
Jack P. Salerno
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology Lexington, Massachusetts 02173
R. W. Mcclelland
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology Lexington, Massachusetts 02173
J. G. Mavroides
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology Lexington, Massachusetts 02173
John C. C. Fan
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology Lexington, Massachusetts 02173
A. F. Witt
Affiliation:
Department of Materials Science and Engineering,Massachusetts Institutte of Technology Cambridge, Massachusetts 02139
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Abstract

The electronic properties of tilt boundaries with misorientation angles ranging from 0 to 30° in n-type GaAs bicrystal layers have been investigated. The current-voltage and capacitance-voltage characteristics are consistent with a double-depletion-region model. The height of the grain boundary potential barrier remains constant while the density of grain boundary states varies with misorientation angle. Deep level transient spectroscopy has revealed the presence of two bands of grain boundary states at approximately 0.65 and 0.9 eV below the conduction band. These states are attributed to bond reconstruction at the grain boundary.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 14: Symposium B – Defects in Semiconductors II , 1982 , 375
Copyright
Copyright © Materials Research Society 1982

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References

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