Hostname: page-component-848d4c4894-4hhp2 Total loading time: 0 Render date: 2024-05-10T21:08:38.053Z Has data issue: false hasContentIssue false
  • English
  • Français

Electronic Properties of Dislocations in Heavily Dislocated Quantum well Structures: Doping Effects

Published online by Cambridge University Press:  28 February 2011

T. Y. Liu ,
P. M. Petroff ,
H. Kroemer  and
A. C. Gossard
T. Y. Liu
Affiliation:
Department of Electrical and Computer Engineering, and Materials Department, University of California at Santa Barbara, Santa Barbara, CA 93106
P. M. Petroff
Affiliation:
Department of Electrical and Computer Engineering, and Materials Department, University of California at Santa Barbara, Santa Barbara, CA 93106
H. Kroemer
Affiliation:
Department of Electrical and Computer Engineering, and Materials Department, University of California at Santa Barbara, Santa Barbara, CA 93106
A. C. Gossard
Affiliation:
Department of Electrical and Computer Engineering, and Materials Department, University of California at Santa Barbara, Santa Barbara, CA 93106
Get access

Abstract

In heavily dislocated GaAs (dislocation density of 108cm-2), the low-temperature cathodo- luminescence efficiency of quantum wells and superlattices is dramatically higher than that of a bulk-like layer. Furthermore, the luminescence efficiency can be further improved by doping the barriers of the GaAs/(Al,Ga)As multi-quantum well structures with beryllium (Be). Two quite different possible models for this observation are discussed: One assumes that the effect is due to the expulsion of dislocation kinks from the wells, the other that it is due to the effect of well width fluctuations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 145: Symposium A – III-V Heterostructures for Electronic/Photonic Devices , 1989 , 393
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Morrison, S. R., Phys. Rev. 104, 619 (1956).Google Scholar
[2] Al-Jassim, M. M., Blakeslee, A. E., Jones, K. M., and Asher, S. E., Inst. Phys. Conf. Ser. No. 87, 99 (1987).Google Scholar
[3] Chen, H. Z., Ghaffari, A., Wang, H., Morkoc, H., and Yariv, A., Appl. Phys. Lett. 51, 1320 (1987).Google Scholar
[4] Liu, T. Y., Petroff, P. M., and Kroemer, H., J. Appl. Phys. 64, 6810 (1988).Google Scholar
[5] Kroemer, H., Liu, T. Y., and Petroff, P. M., Proceedings of the 5th International Conference on Molecular Beam Epitaxy, Sapporo, Japan (1988).Google Scholar
[6] Kimerling, L. C. and Patel, J. R., VLSI Electron. 12, 223 (1985).Google Scholar
[7] Petroff, P. M., Logan, R. A., and Savage, A., Phys. Rev. Lett. 44, 4, 287 (1980).Google Scholar
[8] Dodson, B. W. and Taylor, P. A., Appl. Phys. Lett. 49, 642 (1986).Google Scholar
[9] Sakaki, H., Noda, T., Hirakawa, K., Tanaka, M., and Matsusue, T., Appl. Phys. Lett. 51, 1934 (1987).Google Scholar