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Electronic Impact of Inclusions in Diamond

Published online by Cambridge University Press:  31 January 2011

Erik M. Muller ,
John Smedley ,
Balaji Raghothamachar ,
Mengjia Gaowei ,
Jeffrey W. Keister ,
Ilan Ben-Zvi ,
Michael Dudley  and
Qiong Wu
Erik M. Muller
Affiliation:
emuller@bnl.gov, Stony Brook University, Department of Materials Science and Engineering, Stony Brook, New York, United States
John Smedley
Affiliation:
smedley@bnl.gov, Brookhaven National Laboratory, Instrumentation Division, Upton, New York, United States
Balaji Raghothamachar
Affiliation:
braghoth@bnl.gov, Stony Brook University, Department of Materials Science and Engineering, Stony Brook, New York, United States
Mengjia Gaowei
Affiliation:
mgaowei@ic.sunysb.edu, Stony Brook University, Department of Materials Science and Engineering, Stony Brook, New York, United States
Jeffrey W. Keister
Affiliation:
jkeister@bnl.gov, Brookhaven National Laboratory, NSLS-II, Upton, New York, United States
Ilan Ben-Zvi
Affiliation:
benzvi@bnl.gov, Brookhaven National Laboratory, Collider-Accelerator Department, Upton, New York, United States
Michael Dudley
Affiliation:
mdudley@notes.cc.sunysb.edu, Stony Brook University, Department of Materials Science and Engineering, Stony Brook, New York, United States
Qiong Wu
Affiliation:
qiowu@bnl.gov, Brookhaven National Laboratory, Collider-Accelerator Department, Upton, New York, United States
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Abstract

X-ray topography data are compared with photodiode responsivity maps to identify potential candidates for electron trapping in high purity, single crystal diamond. X-ray topography data reveal the defects that exist in the diamond material, which are dominated by non-electrically active linear dislocations. However, many diamonds also contain defects configurations (groups of threading dislocations originating from a secondary phase region or inclusion) in the bulk of the wafer which map well to regions of photoconductive gain, indicating that these inclusions are a source of electron trapping which affect the performance of diamond X-ray detectors. It was determined that photoconductive gain is only possible with the combination of an injecting contact and charge trapping in the near surface region. Typical photoconductive gain regions are 0.2 mm across; away from these near-surface inclusions the device yields the expected diode responsivity.

Keywords

diamondphotoconductivitycrystal growth
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1203: Symposium J – Diamond Electronics and Bioelectronics-Fundamentals to Applications III , 2009 , 1203-J17-19
Copyright
Copyright © Materials Research Society 2010

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