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Electron-Beam Assisted CVD of Silicon Homoepitaxial Films

Published online by Cambridge University Press:  25 February 2011

J. P. West  and
C. B. Fleddermann
J. P. West
Affiliation:
Department of Electrical Engineering and Computer Engineering, University of New Mexico, Albuquerque, NM 87131 Current address: Motorola, Inc., Austin, TX
C. B. Fleddermann
Affiliation:
Sandia National Laboratories, Division 1126, P. 0. Box 5800, Albuquerque, NM 87185 andthe Center for High Technology MaterialsUniversity of New Mexico, Albuquerque, NM 87131
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Abstract

The use of a wide-area electron beam to aid the deposition of epitaxial silicon films has been studied. The electron beam used in this study is generated using a cold cathode, abnormal-glow discharge which allows a wide variation of electron energy and beam current. Depositions are performed on single crystal silicon substrates which are prepared using standard wet chemical silicon cleaning techniques and an in situ plasma etch using nitrogen tri-fluoride diluted in hydrogen. The beam diameter is approximately 10 cm and can readily be scaled up to accommodate larger diameters, allowing great potential for large area single wafer deposition. Using electron beams generated in this system, we have demonstrated enhanced growth rates and improved crystalline quality for films grown withelectronbeam enhancement.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 129: Symposium B – Laser and Particle-Beam Modification of Chemical Processes on Surfaces , 1988 , 527
Copyright
Copyright © Materials Research Society 1989

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References

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