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Electron Trapping Properties of Silicon Nitride Determined by Avalanche Injection

Published online by Cambridge University Press:  25 February 2011

Y. C. Park ,
W. B. Jackson ,
N. M. Johnson  and
S. B. Hagstrom
Y. C. Park
Affiliation:
Materials Science Dept., Stanford University, Stanford, CA 94305
W. B. Jackson
Affiliation:
Xerox Research Center, 3333 Coyote Hill Rd., Palo Alto, CA 94304
N. M. Johnson
Affiliation:
Xerox Research Center, 3333 Coyote Hill Rd., Palo Alto, CA 94304
S. B. Hagstrom
Affiliation:
Materials Science Dept., Stanford University, Stanford, CA 94305
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Abstract

This paper presents the results of a comparison of the electron trapping in plasma-enhanced chemical vapor deposited nitrides (PECVD) to low pressure CVD (LPCVD) nitrides. The electron trapping was investigated using avalanche injection of electrons from the c-Si substrate over a thermal Si02 barrier into the various nitrides. The average trapping distance was 3–20nm in the various nitrides and the density of the traps was found to be around 2X1018 cm−3 for the PECVD nitrides while the density for LPCVD nitride was about 4X1018traps cm−3.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 551
Copyright
Copyright © Materials Research Society 1989

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References

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