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Electron Microscopy of InN Films

Published online by Cambridge University Press:  26 February 2011

J. S. Morgan ,
T. J. Kistenmacher ,
W. A. Bryden  and
T. O. Poehler
J. S. Morgan
Affiliation:
Applied Physics Laboratory, The Johns Hopkins University, Laurel, Maryland 20707–6099
T. J. Kistenmacher
Affiliation:
Applied Physics Laboratory, The Johns Hopkins University, Laurel, Maryland 20707–6099
W. A. Bryden
Affiliation:
Applied Physics Laboratory, The Johns Hopkins University, Laurel, Maryland 20707–6099
T. O. Poehler
Affiliation:
Applied Physics Laboratory, The Johns Hopkins University, Laurel, Maryland 20707–6099
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Abstract

This paper describes growth morphology and structure of rfmagnetron sputtered thin films of InN, studied by plan-view transmission electron microscopy (TEM) and by scanning electron microscopy (SEM). Films deposited on TEM grids, (0001) sapphire, (111) silicon and amorphous quartz were prepared for TEM by mechanical abrasion of the substrate followed by sputter etching. At low deposition temperatures (<400°C), films consisted of small, basal-oriented, columnar grains. Above 500°C, growth consisted of larger, faceted, basal-oriented, mesa-island grains. Observations of growth morphology and defect structure are correlated with structural, compositional and electrical properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 162: Symposium F – Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors , 1989 , 579
Copyright
Copyright © Materials Research Society 1990

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References

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