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Electron Microdiffraction Investigation of a GexSi1−x Buffer for Strain-Symmetrised Superlattice Structures

Published online by Cambridge University Press:  22 February 2011

W. T. Pike ,
R. A. A. Kubiak ,
E. H. C. Parker  and
T. E. Whall
W. T. Pike
Affiliation:
Cavendish Laboratory, University of Cambridge, Madingley Road, Cambridge CB3 OHE, UK. Now at Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Drive, Pasadena, CA 91109
R. A. A. Kubiak
Affiliation:
Department of Physics, University of Warwick, Coventry CV4 7AL, UK
E. H. C. Parker
Affiliation:
Department of Physics, University of Warwick, Coventry CV4 7AL, UK
T. E. Whall
Affiliation:
Department of Physics, University of Warwick, Coventry CV4 7AL, UK
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Abstract

A candidate GeSi buffer layer structure suitable for strain-symmetrised GeSi/Si superlattice overgrowth is grown by molecular-beam epitaxy and its strain state characterised using microdiffraction in a dedicated scanning transmission electron microscope. The structure consists of five alloy layers of increasing Ge concentration grown on a Si (100) substrate, with all but the last annealed at high temperature. Analysis of higher order Laue zone deficit lines in the microdiffraction patterns acquired from each layer indicate that relaxation is complete in all the layers. Images of the structure in the transmission electron microscope show good crystallinity of the final layer with low concentrations of threading dislocations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 220: Symposium B – Silicon Molecular Beam Epitaxy , 1991 , 223
Copyright
Copyright © Materials Research Society 1991

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References

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