Hostname: page-component-7bb8b95d7b-qxsvm Total loading time: 0 Render date: 2024-09-12T05:23:48.143Z Has data issue: false hasContentIssue false
  • English
  • Français

Electron Band Structure of MnGaN

Published online by Cambridge University Press:  01 February 2011

Dimiter Alexandrov ,
Nikolaus Dietz ,
Ian Ferguson  and
Hang Yu
Dimiter Alexandrov
Affiliation:
dimiter.alexandrov@lakeheadu.ca, Lakehead University, Electrical Engineering, 955 Oliver Road, Thunder Bay, P7B5E1, Canada, (807)343-8311
Nikolaus Dietz
Affiliation:
ndietz@gsu.edu, Georgia State University, Department of Physics and Astronomy, Atlanta, GA, 30302-3965, United States
Ian Ferguson
Affiliation:
ian.ferguson@ece.gatech.edu, Georgia Institute of Technology, School of Elect. & Comp. Engineering, Atlanta, GA, 30332-0250, United States
Hang Yu
Affiliation:
hyu@lakeheadu.ca, Lakehead University, Department of Electrical Engineering, 955 Oliver Road, Thunder Bay, P7B5E1, Canada
Get access

Abstract

Investigation of the properties of MnxGa1-xN semiconductor alloy is performed on the basis of LCAO electron band structure of this semiconductor. The authors model this alloy on the basis of Mn substitutions on Ga sites and it is identified that the ternary semiconductor MnxGa1-xN has two tetrahedral binary constituents – GaN and MnN. It is found that the sp3 hybrid orbital of the N atom attracts an electron from the 3d orbital of the Mn atom and thus the Mn-N bonding becomes of sp3 type. In this way the total electron spin of the 3d orbital of the Mn atom becomes 3/2, which determines that the energy levels 4F, 4D, 4P and 4G belonging to this orbital to be occupied. LCAO electron band structure of wurtzite MnxGa1-xN for points Γυc1 and Γυv15 (υ = 1, 2, 3, 4, 5) is calculated by previously developed method and the positions of the levels 4F, 4D, 4P and 4G in this structure are determined. It is found dependence of the total electron spin of the Mn atom on the position of the Fermi level in the electron band diagram of MnxGa1-xN. Also it is found that the total spin depends on electron inter-band transitions as well. The optical properties of the wurtzite MnxGa1-xN are determined as well.

Keywords

III-VspintronicMn
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1040: Symposium Q – Nitrides and Related Bulk Materials , 2007 , 1040-Q05-02
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Davydov, V. Yu., Klochikhin, A. A. et al. , Physica Status Solidi (b), 229, 1, (2002)Google Scholar
2. Davydov, V. Yu., Klochikhin, A. A. et al. , Physica Status Solidi (b), 230, 4, (2002)Google Scholar
3. Davydov, V. Yu., Klochikhin, A. A. et al. , International Workshop on Nitride Semiconductors, 22 – 25 July 2002, Aachen, Germany, p.133, (2002)Google Scholar
4. Butcher, K.S.A., Wintrebert-Fouquet, M., , Motlan, Shrestha, S. K., Timmers, H., Prince, K. E. and Tansley, T. L., Materials Research Society Symposium Proceeding 743 (2003) 707 Google Scholar
5. Wu, J. et al. , Applied Physics Letters, 80, 3967, (2002)Google Scholar
6. Yu.|Davydov, V. et al. , Physica Status Solidi (b), 234, 787, (2002)10.1002/1521-3951(200212)234:3<787::AID-PSSB787>3.0.CO;2-H3.0.CO;2-H>Google Scholar
7. Alexandrov, D., Journal of Crystal Growth, 246, 325, (2002)Google Scholar
8. Alexandrov, D., Butcher, K.S.A., Wintrebert-Fouquet, M., Journal of Crystal Growth, 269, 77, (2004)Google Scholar
9. Alexandrov, D., Butcher, S., Tansley, T., Physica Status Solidi (b), 203, 25, (2006)10.1002/pssa.200563501Google Scholar
10. Kronik, L., Jain, M., Chelikowsky, J., Physical Review B, 66, 041203(R) (2002)Google Scholar
11. Haider, M. B., Constantin, C., Al-Brithen, H., Yang, H., Trifan, E., Ingram, D., Smith, A., Kelly, C., Ijiri, Y., Journal of Applied Physics, 93, 5274, (2003)Google Scholar
12. Aoki, M., Yamane, H., Shimada, M., Kajawara, T., Journal of Alloys and Compounds, 364, 280, (2004)10.1016/S0925-8388(03)00506-1Google Scholar
13. Haider, M. B., Constantin, C., Al-Brithen, H., Carutu, G., O'Connor, C., Smith, A., Physica Status Solidi (a), 202, 1135, (2005)Google Scholar
14. Marques, M., Ferreira, L., Teles, L., Scolfaro, L., Furthmuler, J., Bechstedt, F., Physical Review B, 73, 224409, (2006)Google Scholar
15. Mann, J., “Atomic Structure Calculations, 1”, Clearinghouse for Technical Information, Springfield (1967)Google Scholar
16. Koiller, B., Falocov, L., Journal of Physics C, 7, 299, (1974)Google Scholar
17. Harrison, W. A., “Electronic Structure and the Properties of Solids”, Dover Publ. Inc, (1989)Google Scholar
18. Herman, F., Skillman, B., “Atomic Structure Calculations”, Prentice Hall (1963)Google Scholar
19. Fritzsche, H., Journal of Non-Crystalline Solids, 6, 49, (1971)10.1016/0022-3093(71)90015-9Google Scholar
20. Efros, A., Shklovskii, B., “Electronic Properties of Doped Semiconductors”, Springer-Verlag, Berlin – Heidelberg (1984)Google Scholar