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Electron and Ion Beam-Enhanced Adhesion

Published online by Cambridge University Press:  22 February 2011

I.V. Mitchell ,
J.S. Williams ,
D.K. Sood ,
K.T. Short ,
S. Johnson  and
R.G. Elliman
I.V. Mitchell
Affiliation:
Microelectronics Technology Centre, Royal Melbourne Institute of Technology, Melbourne 3000, Australia
J.S. Williams
Affiliation:
Microelectronics Technology Centre, Royal Melbourne Institute of Technology, Melbourne 3000, Australia
D.K. Sood
Affiliation:
Microelectronics Technology Centre, Royal Melbourne Institute of Technology, Melbourne 3000, Australia
K.T. Short
Affiliation:
Microelectronics Technology Centre, Royal Melbourne Institute of Technology, Melbourne 3000, Australia
S. Johnson
Affiliation:
Microelectronics Technology Centre, Royal Melbourne Institute of Technology, Melbourne 3000, Australia
R.G. Elliman
Affiliation:
Microelectronics Technology Centre, Royal Melbourne Institute of Technology, Melbourne 3000, Australia Joint appointment with Chemical Physics Division, CSIRO, Clayton 3168, Australia.
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Abstract

Helium ions of 2 MeV energy and electrons of 5 to 30 keV energy have been used to irradiate a variety of thin (10–330 nm) metal films after deposition on semiconductor and insulator substrates. Dose thresholds for increased adhesion were found following irradiation with either type of particle. It is argued that the stronger bonding arises from an electronic, rather than a collisional, process. Representative results are presented and discussed within the framework of a recent model for heavy ion-induced effects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 25: Symposium C – Thin Films and Interfaces II , 1983 , 189
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

1. Mattax, D.H., Thin Solid Films 18 (1983) 173 Google Scholar
2. Collins, L.E. Perkins, J.G. and Stroud, P.T., Thin Solid Films 4 (1969) 41.Google Scholar
3. Jacobsson, R. and Kruse, B., Thin Solid Films, 15 (1973) 71.Google Scholar
4. Padmanabhan, K.R. and Sørensen, G., Thin Solid Films 81 Google Scholar
5. Laugier, M., Thin Solid Films, 81 (1981) 61.Google Scholar
6. See, for example, Tsaur, B.Y. and Mayer, J.W.. Phil. Mag. A43 (1981) 345.Google Scholar
7. Griffith, J.E., Qiu, Y. and Tombrello., T.A. Nucl. Instr. Meths. 198 (1982). 607.Google Scholar
8. Mendenhall, M.H.. Ph.D. thesis (California Institute of Technology, 1983)Google Scholar
9. Tombrello, T.A., Proceedings of the Sixth International Conference on Ion Beam Analysis, Tempe, Arizona, May 23–27. 1983 (to be published in Nucl. Instr. Meths.)Google Scholar
10. Mitchell, I.V., Williams, J.S., Smith, P. and Elliman, R.G., Appl. Phys. Lett. (in press).Google Scholar
11. Sood, D.K., Bond, P.D. and Badwal, S.P.S., in Ion Implantation and Ion Beam Processing of Materials. eds. Hubler, G.K.et al (to be published, Elsevier-North Holland, 1984).Google Scholar
12. Benjamin, P. and Weaver, C., Proc. Roy Soc. A 254 (1960) 163.Google Scholar
13. Hall, T.M., Wagner, A. and Thompson, L.F. J. Vac. Sci. Technical 16 (1979) 1889.Google Scholar
14. Ashby, C.I. H., Appl. Phys. Lett. 43 (1983) 609.Google Scholar
15. Sofield, C.J. (private communication).Google Scholar
16. Stengl, G., Kaitna, R., Lochsner, H., Wolf, P. and Sacher, R., J. Vac. Sci. Technol, 16 (1979) 1883.Google Scholar
17. Short, K.T., Chivers, D.J., Elliman, R.G., Liu, J., Pogany, A.P., Wagenfeld, H.K. and Williams, J.S. in, Ion Implantation and Ion Beam Processing of Materials eds. Hubler, G.K.et al ( to be published, Elsevier-North Holland, 1984).Google Scholar