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Electron and Hole Transport in a-SiH at High Field and Low Temperature

Published online by Cambridge University Press:  21 February 2011

C. E. Nebel  and
R. A. Street
C. E. Nebel
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, California 94304 USA
R. A. Street
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, California 94304 USA
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Abstract

Low temperature, high field properties of electron and hole transport are investigated by time-of-flight (TOF), steady-state and transient space charge limited current (SCLC) experiments on intrinsic a-Si:H. Charge collection and TOF experiments performed at T= 80 K reveal hole μτ-products of = 8 × 10-10 cm2/V and hole mobilities μ ≤ 9×10-3 cm2/Vs. The field effect on hole thermalization is demonstrated by evaluation of the post transit current decay. SCLC experiments on p+ -i-n+ (electron transport) and p + -i-n+ (hole transport) configurations are introduced and interpreted in terms of field enhanced conductivity and mobility. The experiments demonstrate the overwhelming field effect on carrier hopping in the band tail regions of a-Si:H. Considerably higher fields have to be applied in the case of hole transport than electron transport to achieve comparable conductivities; this is discussed on the basis of the different tail state distributions and localization lengths.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 825
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. Nebel, C. E., Weller, H. C., Bauer, G. H., Mat. Res. Society Proc. 192, 151 (1989).CrossRefGoogle Scholar
2. Tiedie, T., in “Proc. Int. Workshop on Amorphous Semiconductors” edited by Fritzsche, H., Han, D.X., Tsai, C. C., World Scientific Publishing, 113 (1987).Google Scholar
3. Silver, M., Bässler, H., Phil. Mag. B 56, 109 (1987).Google Scholar
4. Abram, R. A., Edwards, S., J. Phys. C 5, 1183 (1972).Google Scholar
5. Nebel, C. E., J. Non-Cryst. Sol. 137&138, 395 (1991).CrossRefGoogle Scholar
6. Stachowitz, R., Fuhs, W., Jahn, K., Phil Mag. B 62, 5 (1990).Google Scholar
7. Kocka, J., Nebel, C. E., Bauer, G. H., Klima, O., Xiao, Y., Sipek, E., Juska, G., in “The Physics of Semiconductors”, edited by Anastassakis, E.M., Joannopoulos, J. D., World Scientific, 2059 (1990).Google Scholar
8. Antoniadis, H., Schiff, E., Phys. Rev. B 43, 13957 (1991).Google Scholar
9. Shklovskii, B. I., Levin, E. I., Fritzsche, H., Baranovskii, S. D., in “Advances in Disordered Semiconductors” ed. by Fritzsche, H., World Scientific, 161 (1990).Google Scholar
10. Schumacher, R., Dissertation Fachbereich Physik, Universitaet Marburg 1991.Google Scholar
11. Nebel, C. E., Street, R. A., Johnson, N. B., Kocka, J., to be published.Google Scholar
12. Lampert, M. A., Mark, P., in “Current Injection in Solids” Academic Press 1970.Google Scholar