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Electron and Hole Transient Currents in Hydrogenated Amorphous Silicon and Some Alloys Measured by The Photoconductive Time-of-Flight Technique

Published online by Cambridge University Press:  10 February 2011

Astrid Eliat ,
Guy Adriaenssens  and
Baojie Yan
Astrid Eliat
Affiliation:
Division of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138, astrid@deas.harvard.edu
Guy Adriaenssens
Affiliation:
Semiconductor Laboratory, Katholieke Universiteit Leuven, 3001 Leuven, Belgium
Baojie Yan
Affiliation:
Physics Department, University of Utah, Salt Lake City, UT 84112
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Abstract

A series of pure hydrogenated amorphous silicon (a-Si:H) samples as well as carbon (aSi:C:H) and sulfur alloys (a-Si:S:H) were investigated by means of the photoconductive time-of-flight technique. Drift moblility (µd) measurements reveal a fast decrease of the electron µd upon C or S addition, while the hole µd does not change significantly. Contrary to the electron transients, hole transient currents do not show the typical space-charge-limited (SCL) features, even for high light intensities where these features are normally seen. SCL features are observed to disappear for electron transients as well in the a-Si:H alloys with increasing alloy content. Above results are all explained starting from the a-Si:H density of states (DOS) model where the valence band (VB) tail is much broader than the conduction band (CB) tail. Introducing additional disorder by alloying broadens both the VB and the CB tails while the relative increase of the CB tail is much greater than that of the VB tail.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 661
Copyright
Copyright © Materials Research Society 1998

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References

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