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Electromigration of lower and upper Cu lines in dual-damascene Cu interconnects

Published online by Cambridge University Press:  01 February 2011

Ahila Krishnamoorthy ,
Guo Qiang ,
Anand V. Vairagar  and
Subodh Mhaisalkar
Ahila Krishnamoorthy
Affiliation:
Semiconductor process and Technology – Advanced Interconnects, Institute of Microelectronics, Singapore.
Guo Qiang
Affiliation:
Semiconductor process and Technology – Advanced Interconnects, Institute of Microelectronics, Singapore.
Anand V. Vairagar
Affiliation:
Department of Materials Science and Engineering, Nanyang Technological University, Singapore
Subodh Mhaisalkar
Affiliation:
Department of Materials Science and Engineering, Nanyang Technological University, Singapore
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Abstract

Electromigration in upper M2 and lower M1 Cu lines in dual damascene interconnects was investigated by using two types of via terminated structures. Two different types of failures termed as abrupt and gradual failures were observed. Electromigration failures in M2 were mostly by gradual failures, while abrupt failures dominated in M1. Significantly different types of voids were observed in M1 as compared to those in M2, though similar resistance change was observed. Experimentally calculated activation energies for M1 and M2 indicated interfacial electromigration. Activation energy of M1 was found to be much lower than that of M2. This clearly demonstrates the asymmetry of electromigration in M2 and M1 Cu lines in dual damascene interconnects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 766: Symposium E – Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics - 2003 , 2003 , E3.13
Copyright
Copyright © Materials Research Society 2003

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References

1. Hu, C.K., Rosenberg, R., Rathore, H., Ngugen, D., Proceedings of IITC (1999) pp.267–269.Google Scholar
2. Ogawa, Ennis T., Lee, Ki-Don, Blaschke, Volker A., and Ho, Paul S., IEEE Transactions on reliability, Vol.51, NO. 4, (2002), pp.403–419.Google Scholar
3. Gill, J., Sullivan, T., Yankee, S., Barth, H., and Glasow, A. V., Proceedings of the International Reliability Physics Symposium (2002), pp.298–304.Google Scholar
4. Proost, J., Hirato, T., Furuhara, T., Maex, K., Cellis, J.P., J. Appl. Phys., 87, 2792, (2000).Google Scholar
5. Ogawa, E.T., Bierwag, A. J., Lee, K.D., Matsuhashi, H., Justison, P. R., Ramamurthi, A. N., and Ho, P. S., Appl. Phys. Lett., 78, 2652 (2001).Google Scholar
6. Lloyd, J.R., Clemens, J., Snede, R., Microelectronics Reliability, 39 (1999), pp.1595 Google Scholar