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Electroluminescent Devices Made from Silicon Nanocrystals Embedded in Various Host Matrices

Published online by Cambridge University Press:  15 February 2011

Gildardo R. Delgado ,
Howard W. H. Lee  and
Khashayar Pakbaz
Gildardo R. Delgado
Affiliation:
Lawrence Livermore National Laboratory, P.O. Box 808, L-174, Livermore, CA 94551
Howard W. H. Lee
Affiliation:
Lawrence Livermore National Laboratory, P.O. Box 808, L-174, Livermore, CA 94551
Khashayar Pakbaz
Affiliation:
Lawrence Livermore National Laboratory, P.O. Box 808, L-174, Livermore, CA 94551
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Abstract

Si nanocrystals produced by ultrasonic fracturing of porous silicon (PSi) were used to fabricate electroluminescent (EL) devices. The active EL material consists of Si nanocrystals embedded in various host matrices such as polyvinylcarbazole (PVK), polymethylmethacrylate (PMMA), and silica sol-gels. Several device configurations were used to induce EL processes that rely on radiative electron-hole recombination via carrier injection or impact excitation of the nanocrystals. We report on the optical and electrical properties of these devices. We discuss relevant physics pertaining to the Si nanocrystals/host and discuss advantages and disadvantages among the different host matrices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 669
Copyright
Copyright © Materials Research Society 1997

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References

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