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Electroluminescence study of Si-Si1-xGex/Si1-yCy-Si p-i-n diode structures

Published online by Cambridge University Press:  10 February 2011

Kenneth B. Joelsson ,
Wei-Xin Ni ,
Chun-Xia Du  and
Göran V. Hansson
Kenneth B. Joelsson
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden+46 13281371, +46 13137568, kjo@ifm.liu.se
Wei-Xin Ni
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden+46 13281371, +46 13137568, kjo@ifm.liu.se
Chun-Xia Du
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden+46 13281371, +46 13137568, kjo@ifm.liu.se
Göran V. Hansson
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden+46 13281371, +46 13137568, kjo@ifm.liu.se
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Abstract

The electroluminescence from p-i-n diode structures with Si1-yCy/Si1-xGex layers in the depletion region has been studied. Emission attributed to an overlap of the wavefunction associated with electrons confined in the Si1-yCy layer and the wavefunction associated with holes confined in the Si1-xGe, layer has been observed. For low injection currents, emission due to recombination occurring in the Si1-xGex layer is more dominant. For structures with higher C concentration, the interface related emission can persist up to higher temperatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 486: Symposium H – Materials & Devices for Silicon Based Optoelectronics , 1997 , 169
Copyright
Copyright © Materials Research Society 1998

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