Hostname: page-component-77c89778f8-swr86 Total loading time: 0 Render date: 2024-07-18T19:38:12.011Z Has data issue: false hasContentIssue false
  • English
  • Français

Electroluminescence And Photoluminescence Studies Of A Nitride-Rich GaN1-XPx SQW Structure LED Grown By Laser-Assisted Metal-Organic Chemical Vapor Deposition

Published online by Cambridge University Press:  21 March 2011

Junjiroh Kikawa ,
Seikoh Yoshida  and
Yoshiteru Itoh
Junjiroh Kikawa
Affiliation:
Fitel Phtonics Laboratory, The Furukawa Electric Co., Ltd., 8, Yawatakaigan-dori, Ichihara, Chiba, 290-5555, Japan
Seikoh Yoshida
Affiliation:
Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd., 2-4-3, Okano, Nishi-ku, Yokohama, 220-0073, Japan
Yoshiteru Itoh
Affiliation:
Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd., 2-4-3, Okano, Nishi-ku, Yokohama, 220-0073, Japan
Get access

Abstract

We fabricated a light-emitting diode (LED) having a nitride-rich GaN1-xPx single quantum well (SQW) structure grown using laser-assisted metal-organic chemical vapor deposition (LA-MOCVD). The peak energy of the electroluminescence (EL) of the LED was 2.88 eV, which is in the vicinity of the energy due to the recombination of the bounding exciton by P atoms, known as an isoelectronic trap in GaN. We observed a blue shift of this peak by increasing the drive current. We also observed extra emission of band-to-band recombination at about 3.4 eV above a drive current of 32 mA, where the external quantum efficiency was already saturated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I3.44.1
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Nakamura, S., Jpn. J. Appl. Phys., 30, 1620 (1991).Google Scholar
2. Iwata, K., Asahi, H., Asami, K., Kuroiwa, R. and Gonda, S., Jpn. Appl. 37, 1436 (1998).Google Scholar
3. Iwata, K., Asahi, H., Asami, K. and Gonda, S., J. Crystal Growth, 175/176, 150 (1997).Google Scholar
4. Tampo, H., Asahi, H., Iwata, K., Hiroki, M. and Gonda, S., Technical Report of Jpn. IEICE. 98, ED98 (1998).Google Scholar
5. Kimura, T., Yoshida, S., Yu, J., Yaguchi, H., Onabe, K. and Shiraki, Y., Extended Abstracts of the 1999 Int'l. conf. SSDM, 54 (1999).Google Scholar
6. Kikawa, J., Itoh, Y., and Yoshida, S., to be published in Mat. Res. Soc. Proc. G2.2 (2000).Google Scholar
7. Kikawa, J., Yoshida, S. and Itoh, Y., Proc. Int'l Worksyop on Nitride Semicon. IPAP Conf. Ser. 1, 429 (2000).Google Scholar
8. Casey, H. C. Jr, Muth, J., Krishnankutty, S. and Zavada, J. M., Appl. Phys. Lett., 68, 2867 (1996).Google Scholar
9. Jadwisienzak, W. M. and lozykowski, H. J., Mat. Res. Soc. Symp. Proc. 482, 1033 (1998).Google Scholar
10. Lester, S.D., Ponce, F.A., Craford, M.G. and Steigerwald, D.A., Appl. Phys. Lett. 66, 1249 (1995)Google Scholar