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Electrode Interdependence and Hole Capacitance in the Capacitance -Voltage Characteristics of Hydrogenated Amorphous Silicon Thin-Film Transistors

Published online by Cambridge University Press:  10 February 2011

Hyuk-Ryeol Park  and
J. David Cohen
Hyuk-Ryeol Park
Affiliation:
Dept. of Physics and Materials Research Institute, University of Oregon, Eugene, OR 97403, U.S.A
J. David Cohen
Affiliation:
Dept. of Physics and Materials Research Institute, University of Oregon, Eugene, OR 97403, U.S.A
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Abstract

The inter-electrode capacitance - voltage (C-V) characteristics of back-channel etched inverted-staggered hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) were investigated. It is demonstrated that this simple measurement can be used to diagnose TFT parameters such as the fabricated channel length, the channel resistance, and the error in the mask alignment of the source and drain overlap lengths. The C-V characteristics associated with the hole accumulation in a-Si:H TFTs with n+-type source/drain contacts were also examined. We observed that the a.c. capacitance increases for low frequencies and/or moderately high measurement temperatures provided the gate voltage is sufficiently negative.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 67
Copyright
Copyright © Materials Research Society 1998

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References

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