Hostname: page-component-76fb5796d-qxdb6 Total loading time: 0 Render date: 2024-04-28T05:38:04.869Z Has data issue: false hasContentIssue false

Electrochemical Potential Gradients in Pb(Zr,Ti)O3 Thin Films

Published online by Cambridge University Press:  10 February 2011

M. Brazier
Affiliation:
Department of Physics, Purdue University, West Lafayette, IN 47907
S. Mansour
Affiliation:
School of Materials Engineering, Purdue University, West Lafayette, IN 47907
M. McElfresh
Affiliation:
Department of Physics, Purdue University, West Lafayette, IN 47907
Get access

Abstract

Thin film PbZr0.55Ti0.45O3 (PZT) capacitors were observed to develop a dc voltage offset when driven with an ac applied electric field. This voltage offset displayed a strong dependence on the ambient oxygen partial pressure, PO2, of the atmosphere above the film, in addition to applied electric field and temperature dependencies. A scenario is proposed wherein a chemical potential gradient is established in the film, the magnitude of which is determined by the ambient PO2. The subsequent redistribution of oxygen vacancies is thought to create the observed voltage offset. This hypothesis was supported by the observation of similar voltage offsets in compositionally graded PZT films. This effect shows promise for novel low-temperature oxygen sensing applications.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Brazier, M., Mansour, S., and McElfresh, M., Appl. Phys. Lett. 72, 1121 (1998).Google Scholar
2. Schubring, N. W., Mantese, J. V., Micheli, A. L., Catalan, A. B., and Lopez, R. J., Phys. Rev. Lett. 68, 1778 (1992).Google Scholar
3. Sawyer, C. B. and Tower, C. H., Phys. Rev. 35, 269 (1930).Google Scholar
4. Brazier, M., Mansour, S., and McElfresh, M., Appl. Phys. Lett. 74, 299 (1998).Google Scholar
5. Smyth, D. M., Ferroelectrics 151, 115 (1994).Google Scholar
6. Kwok, C. K., Desu, S. B., Mat. Res. Soc. Symp. Proc. 243, 393 (1992).Google Scholar
7. Waser, R., J. Am. Ceram. Soc. 74, 1934 (1991).Google Scholar
8. Schwarfschwerdt, R., Mazur, A., Schirmer, O. F., Hesse, H., and Mendricks, S., Phys. Rev. B 54, 15288 (1996).Google Scholar
9. Baiatu, T., Waser, R., Hardtl, K. H., J. Am. Ceram. Soc. 73, 1663 (1990).Google Scholar
10. Yoo, I. K., and Desu, S. B., Phys. Sta. Sol. (a) 133, 565 (1992).Google Scholar
11. Pan, M. J., Park, S. E., Park, C. W., Markowski, K. A., Yoshikawa, S., and Randall, C. A, J. Am. Ceram. Soc. 79, 2971 (1996).Google Scholar