Hostname: page-component-76fb5796d-5g6vh Total loading time: 0 Render date: 2024-04-26T05:23:12.268Z Has data issue: false hasContentIssue false

Electrically Conductive Pt-Zr-B and Pt-Si Thin Films for Use in High Temperature Harsh Environments

Published online by Cambridge University Press:  08 May 2015

R.J. Lad
Affiliation:
Department of Physics & Astronomy and Laboratory for Surface Science & Technology, University of Maine, Orono, ME 04469-5708, U.S.A.
D.M. Stewart
Affiliation:
Department of Physics & Astronomy and Laboratory for Surface Science & Technology, University of Maine, Orono, ME 04469-5708, U.S.A.
R.T. Fryer
Affiliation:
Department of Physics & Astronomy and Laboratory for Surface Science & Technology, University of Maine, Orono, ME 04469-5708, U.S.A.
J.C. Sell
Affiliation:
Department of Physics & Astronomy and Laboratory for Surface Science & Technology, University of Maine, Orono, ME 04469-5708, U.S.A.
D.J. Frankel
Affiliation:
Department of Physics & Astronomy and Laboratory for Surface Science & Technology, University of Maine, Orono, ME 04469-5708, U.S.A.
G.P. Bernhardt
Affiliation:
Department of Physics & Astronomy and Laboratory for Surface Science & Technology, University of Maine, Orono, ME 04469-5708, U.S.A.
R.W. Meulenberg
Affiliation:
Department of Physics & Astronomy and Laboratory for Surface Science & Technology, University of Maine, Orono, ME 04469-5708, U.S.A.
Get access

Abstract

Stable, electrically conductive, thin film materials are key components for high temperature sensors operating in harsh environments. In this work, nanocomposite Pt-Zr-B and Pt-Si thin film materials were grown to a nominal thickness of 200 nm on both r-cut sapphire (α-Al2O3) substrates using e-beam evaporation, and their structure, morphology, and chemical composition was characterized following thermal treatments in an air laboratory furnace up to 1300°C. In the Pt-Zr-B system, oxidation of a nanolaminate architecture consisting of ZrB2 and pure Pt layers leads to boron oxide evaporation and the formation of Pt grains decorated by tetragonal-ZrO2 nanocrystallites at high temperature. Electrical conductivity measurements with a 4-point probe show that this nanocomposite film structure can maintain a film conductivity > 1x106 S/m up to 1300°C, depending on the Pt/ZrB2 layer thickness ratio. In the Pt-Si system, film compositions were varied to yield either nanocrystalline Pt3Si, Pt2Si, or PtSi phases depending on the Pt-Si ratio, or an amorphous phase at high Si content. Above 1000°C in air, Pt-oxide and Si-oxide phases form and coexist with the Pt-Si phases, and some Pt-Si film conductivities remain as high as 1x106 S/m after annealing at 1000°C for 6 hours. It was found that a 100 nm thick amorphous alumina capping layer grown by atomic layer deposition (ALD) aids in limiting film oxidation, but film stress leads to regions of delamination.

Type
Articles
Copyright
Copyright © Materials Research Society 2015 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Pereira da Cunha, M., Moonlight, T., Bernhardt, G., Frankel, D.J., Lad, R.J., Proc. IEEE International Ultrasonics Symposium 2007, 2107.Google Scholar
Pereira da Cunha, M., Lad, R.J., Davulis, P., Canabal, A., Moonlight, T., Moulzolf, S., Frankel, D., Pollard, T., McCann, D., Dudzik, E., Abedi, A., Hummels, D., Bernhardt, G., Proc. IEEE Topical Conference on Wireless Sensors and Sensor Networks 2011, 41.Google Scholar
Moulzolf, S.C., Frankel, D.J., da Cunha, M. P., Lad, R.J., Microsyst. Technol. 20, 523 (2014).CrossRefGoogle Scholar
Pereira da Cunha, M., Lad, R.J., Pollard, T., McCann, D., McCarthy, E., Prata, P., Kelley, R., Proc. IEEE International Ultrasonics Symposium 2014, in press.Google Scholar
Fahrenholtz, W.G., Hilmas, G., Talmy, I.G., Zaykoski, J., Am, J.. Ceram. Soc. 90, 1347 (2007).CrossRefGoogle Scholar
Murarka, S.P., Intermetallics 3, 173 (1995).CrossRefGoogle Scholar
Stewart, D.M., Frankel, D.J., Lad, R.J., Vac, J.. Sci. Technol. A 2015, in press.Google Scholar
Wang, Y., Trenary, M., Chemistry of Materials 5, 199 (1993).CrossRefGoogle Scholar
Scanlan, C.M., Gajdardziska-Josifovska, M., Aita, C.R., Appl. Phys. Lett. 64, 3548 (1994).CrossRefGoogle Scholar
Aita, C.R., Wiggins, M.D., Whig, R., Scanlan, C.M., Gajdardziska-Josifovska, M., J. Appl. Phys. 79, 1176 (1996).CrossRefGoogle Scholar
Thompson, C., Ann. Rev. Mater. Res. 42, 399 (2012).CrossRefGoogle Scholar