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Electrical Transport in Heavily B-Doped Epitaxial Diamond and NCD

Published online by Cambridge University Press:  01 February 2011

Milos Nesladek ,
Phillipe Bergonzo ,
Jiri Mares  and
Pavel Hubik
Milos Nesladek
Affiliation:
milos.nesladek@cea.fr, CEA Saclay, DRT, Bat 451, p. 84, Gif Sur Yvette, N/A, France, +33169088704
Phillipe Bergonzo
Affiliation:
philippe.bergonzo@cea.fr, CEA, DRT-LIST, Saclay, Bat 451, p.84,, Gif sur Yvette, 91191, France
Jiri Mares
Affiliation:
semicon@fzu.cz, Czech Academy of Sciences, Institute of Physics, Cukrovarnicka 10, Praha 6, 16000, Czech Republic
Pavel Hubik
Affiliation:
hubik@fzu.cz, Czech Academy of Sciences, Institute of Physics, Cukrovarnicka 10, Praha 6, 16000, Czech Republic
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Abstract

This paper deals with a LT transport study in B-doped diamond. To understand the electrical transport in heavily B-doped diamond and the influence of disorder onto the electrical transport, we have prepared nanocrystalline and epitaxial B-doped diamond films at CEA Saclay. The transport properties of these layers have been studied at the Institute of Physics Czech Academy of Sciences in Prague. It has been found that our B-doped nanocrystalline diamond exhibits also the SC transition, similarly as the original Russian work done on HPHT polycrystals or single crystal diamond. Additionally, the properties of (111) epitaxial films are discussed.

Keywords

diamondelectronic structuresuperconducting
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 956: Symposium J – Diamond Electronics—Fundamentals to Applications , 2006 , 0956-J03-02
Copyright
Copyright © Materials Research Society 2007

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References

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