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Electrical Properties of Thin Film and Bulk Diamond Treated in Hydrogen Plasma

Published online by Cambridge University Press:  26 February 2011

Sacharia Albin  and
Linwood Watkins
Sacharia Albin
Affiliation:
Department of Electrical and Computer Engineering, Old Dominion University Norfolk, VA 23529.
Linwood Watkins
Affiliation:
Department of Electrical and Computer Engineering, Old Dominion University Norfolk, VA 23529.
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Abstract

Current-voltage characteristics of type Ia synthetic diamond, type IIb natural diamond and free-standing diamond films were measured before and after hydrogenation. The diamond films were polycrystalline, deposited on sacrificial silicon substrates using a microwave chemical vapor deposition process. On hydrogenation, all the samples showed several orders of magnitude increase in conductivity. Hydrogenation was carried out under controlled conditions to study the changes in the I-V characteristics of the samples. The concentration of electrically active hydrogen was determined from the I-V data. Hydrogen passivation of deep traps in diamond is clearly demonstrated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 162: Symposium F – Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors , 1989 , 303
Copyright
Copyright © Materials Research Society 1990

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