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Electrical Properties of n- and p-type In0.53Ga0.47As Layers Formed by Ion Implantation and Rapid Thermal(Flash)Anneal
Published online by Cambridge University Press: 28 February 2011
Abstract
Rapid thermal annealing (4−7s) of 28Si and 9Be implants in VPE-grown In0.53Ga0.47As has produced n- and p-type active layers with controlled doping levels between 1017 and 3×1018 cm−3. The multiple-implant schedules were based on Rp and ΔR data derived from SIMS measurements on single-energy implants. The activated n- and p-type layers have a good surface morphology and 300 K mobilities of 3000–7000 and 100–200 cm2 /V−s, respectively. Data on implant schedules, electrical characteristics, carrier concentration profiles, and Rp /ΔRp information are presented.
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- Copyright © Materials Research Society 1987
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