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Electrical Properties of n- and p-type In0.53Ga0.47As Layers Formed by Ion Implantation and Rapid Thermal(Flash)Anneal

Published online by Cambridge University Press:  28 February 2011

S.G. Liu ,
S.Y. Narayan ,
C.W. Magee ,
C.P. Wu ,
F. Kolondra ,
J. Paczkowski  and
D. Capewell
S.G. Liu
Affiliation:
David Sarnoff Research Center, Subsidary of SRI International, Princeton, NJ 08543–5300
S.Y. Narayan
Affiliation:
David Sarnoff Research Center, Subsidary of SRI International, Princeton, NJ 08543–5300
C.W. Magee
Affiliation:
David Sarnoff Research Center, Subsidary of SRI International, Princeton, NJ 08543–5300
C.P. Wu
Affiliation:
David Sarnoff Research Center, Subsidary of SRI International, Princeton, NJ 08543–5300
F. Kolondra
Affiliation:
David Sarnoff Research Center, Subsidary of SRI International, Princeton, NJ 08543–5300
J. Paczkowski
Affiliation:
David Sarnoff Research Center, Subsidary of SRI International, Princeton, NJ 08543–5300
D. Capewell
Affiliation:
David Sarnoff Research Center, Subsidary of SRI International, Princeton, NJ 08543–5300
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Abstract

Rapid thermal annealing (4−7s) of 28Si and 9Be implants in VPE-grown In0.53Ga0.47As has produced n- and p-type active layers with controlled doping levels between 1017 and 3×1018 cm−3. The multiple-implant schedules were based on Rp and ΔR data derived from SIMS measurements on single-energy implants. The activated n- and p-type layers have a good surface morphology and 300 K mobilities of 3000–7000 and 100–200 cm2 /V−s, respectively. Data on implant schedules, electrical characteristics, carrier concentration profiles, and Rp /ΔRp information are presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 92: Symposium B – Rapid Thermal Processing of Electronic Materials , 1987 , 375
Copyright
Copyright © Materials Research Society 1987

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References

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