Hostname: page-component-8448b6f56d-xtgtn Total loading time: 0 Render date: 2024-04-18T06:23:14.188Z Has data issue: false hasContentIssue false
  • English
  • Français

Electrical Properties of Epitaxial Silicide-Silicon Interfaces

Published online by Cambridge University Press:  26 February 2011

R. T. Tung ,
A. F. J. Levi ,
J. M. Gibson ,
K. K. Ng  and
A. Chantre
R. T. Tung
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
A. F. J. Levi
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
J. M. Gibson
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
K. K. Ng
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
A. Chantre
Affiliation:
CNET, Grenoble, France
Get access

Abstract

The Schottky barrier heights of single crystal NiSi2 layers on Si(111) have been studied by current-voltage, capacitance-voltage and activation energy techniques. Near ideal behavior is found for Schottky barriers grown on substrates cleaned at ∼820°C in ultrahigh vacuum. The Fermi level positions at the interfaces of single crystal type A and type B NiSi2 are shown to differ by ∼0.14 eV. Transmission electron microscopy demonstrated the epitaxial perfection of these suicide layers. At a cleaning temperature of 1050° C, the near surface region of lightly doped n-type Si was converted to p-type. The presence of a p-n junction was directly revealed by spreading resistance measurements and resulted in a high apparent Schottky barrier height (≥0.75 eV) which no longer bears immediate relationship to the interface Fermi level position.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 54 , 1985 , 457
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Tung, R. T., Gibson, J. M. and Poate, J. M., Phys. Rev. Lett. 50, 429 (1983).Google Scholar
[2] Cherns, D., Anstis, G. R., Hutchinson, J. L. and Spence, J. C. H., Philos. Mag. A46, 849 (1982).Google Scholar
[3] Gibson, J. M., Tung, R. T. and Poate, J. M., MRS Symp. Proc. 14, 395 (1983).Google Scholar
[4] van Loenen, E. J., Frenken, J. W. M., van der Veen, J. F. and Valeri, S., Phys. Rev. Lett. 54, 827 (1985).Google Scholar
[5] Tung, R. T., Phys. Rev. Lett. 52, 461 (1984).Google Scholar
[6] Ishizaka, A., Nakagawa, K. and Shiraki, Y., 2nd Intern: Symp. Mol. Beam Epitaxy (Tokyo, 1982), p. 183.Google Scholar
[7] Tung, R. T., Gibson, J. M. and Poate, J. M., Appl. Phys. Lett. 42, 888 (1983).Google Scholar
[8] Tung, R. T., J. Vac. Sci. Technol. B2, 465 (1984).Google Scholar
[9] Sze, S. M., Physics of Semiconductor Devices, (Wiley-Interscience, New York, 1981).Google Scholar
[10] Tung, R. T., Ng, K. K., Gibson, J. M. and Levi, A. F. J., to be published.Google Scholar
[11] Tung, R. T. and Gibson, J. M., J. Vac. Sci. Technol. A3, 987 (1985).Google Scholar
[12] Gibson, J. M., Tung, R. T., Pimentel, C. A. and Joy, D. C., Inst. Phys. Conf. Ser. 76, 173 (1985).Google Scholar
[13] Liehr, M., Schmidt, P. E., LeGoues, F. K. and Ho, P. S., Phys. Rev. Lett. 54, 2139 (1985).Google Scholar
[14] Chantre, A., Levi, A. F. J. and Tung, R. T., to be published.Google Scholar
[15] Mottram, J. D., Thanailakis, A. and Northrop, D. C., J. Phys. D8, 1316 (1975).Google Scholar
[16] Allen, F. G., Buck, T. M. and Law, J. T., J. Appl. Phys. 31, 979 (1960).Google Scholar
[17] Safronov, L. N., Aleksandrov, L. N. and Lovyagin, R. N., Phys. Stat. Sol. B107, 461 (1981).Google Scholar
[18] Shannon, J. M., Solid State Electron. 19, 537 (1976).Google Scholar
[19] van der Ziel, A., Solid State Electron. 20, 269 (1977).Google Scholar
[20] Ehrstein, J., in Non Destructive Evaluation of Semiconductor Materials and Devices, edited by Zemel, J., Plenum, 1978.Google Scholar
[21] Hauenstein, R. J., Schlesinger, T. E., McGill, T. C., Hunt, B. D. and Schowalter, L. J., Appl. Phys. Lett. 47, 853 (1985).Google Scholar
[22] Hamann, D. R. and Mattheiss, L. F., Phys. Rev. Lett. 54, 2517 (1985).Google Scholar
[23] Bisi, O., Chiao, L. W. and Tu, K. N., Phys. Rev. B 30, 4664 (1984).Google Scholar
[24] Lim, H. and Allen, R. E., J. Vac. Sci. Technol. B 3, 1221 (1985).Google Scholar