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Electrical Properties of Batio3 thin Films Flash‐Evaporated on si and sio2/Si

Published online by Cambridge University Press:  10 February 2011

J.V. Caballero ,
R. E. Avila ,
V.M. Fuenzalida  and
I. Eisele
J.V. Caballero
Affiliation:
Physics Dept., U. de Santiago de Chile, Cas. 307‐2, Santiago, Chile, jcaballe@lauca.usach.cl;
R. E. Avila
Affiliation:
CCHEN, Cas. 188‐D, Santiago, Chile;
V.M. Fuenzalida
Affiliation:
U. de Chile, FCFM, Santiago, Chile;
I. Eisele
Affiliation:
Univ. der Bundeswehr, W. Heisenberg Weg 39, D85577 Neubiberg, Germany.
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Abstract

BaTiO3 (BT) thin films were prepared by flash evaporation onto p‐Si and SiO2/p‐Si. The films are amorphous and remain so after a thickness reduction by 20% by annealing at 500 °C for 3 min. in O2 atmosphere. The electrical characteristics were measured at room temperature.

Electron injection at the Al to BT interface of Al/BT/Si capacitors is enhanced by the Schottky effect, yielding a value of 11.2 for the dielectric constant of BT. Modeling current‐time measurements yields a trap density of 1024 m3, 0.82 eV below the conduction band. Capacitance‐voltage curve shifts due to bias stress on AI/BT/SiO2/Si capacitors are interpreted as caused by electron injection and trapping in the BT films. Starting deposition at 170 °C or post‐deposition annealing reduces the trap density and increases the C‐V curve shifts by bias stress, from 0.3 to over 14 V at bias stress of‐10 V.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 446: Amorphous and Crystalline Insulating Thin Films–1996 , 1996 , 355
Copyright
Copyright © Materials Research Society 1997

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