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Electrical Properties of 3C-SiC and its application to FET

Published online by Cambridge University Press:  25 February 2011

S. Yoshida ,
K. Endo ,
E. Sakuma ,
S. Misawa ,
H. Okumura ,
H. Daimon ,
E. Muneyama  and
M. Yamanaka
S. Yoshida
Affiliation:
Electrotechnical Laboratory, 1-1-4, Sakura-mura, Niiharigun, Ibaraki, 305, Japan
K. Endo
Affiliation:
Electrotechnical Laboratory, 1-1-4, Sakura-mura, Niiharigun, Ibaraki, 305, Japan
E. Sakuma
Affiliation:
Electrotechnical Laboratory, 1-1-4, Sakura-mura, Niiharigun, Ibaraki, 305, Japan
S. Misawa
Affiliation:
Electrotechnical Laboratory, 1-1-4, Sakura-mura, Niiharigun, Ibaraki, 305, Japan
H. Okumura
Affiliation:
Electrotechnical Laboratory, 1-1-4, Sakura-mura, Niiharigun, Ibaraki, 305, Japan
H. Daimon
Affiliation:
Electrotechnical Laboratory, 1-1-4, Sakura-mura, Niiharigun, Ibaraki, 305, Japan
E. Muneyama
Affiliation:
Electrotechnical Laboratory, 1-1-4, Sakura-mura, Niiharigun, Ibaraki, 305, Japan
M. Yamanaka
Affiliation:
Electrotechnical Laboratory, 1-1-4, Sakura-mura, Niiharigun, Ibaraki, 305, Japan
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Abstract

Electrical and luminescent properties of nondoped, and N-doped n-type 3C-SiC layers epitaxially grown on Si(100) by chemical vapor deposition were studied. Nondoped n-type epilayers with carrier concentration of 1×1016cm−3 and the Hall mobility of 750cm2/Vs at room temperature have the activation energy of donors, Ed=2OmeV, which is different from that of the donors in the N-doped layers. The photoluminescence spectra of nondoped layers are different from those of N-doped ones. These results suggest that the donors in the unintentionally doped n-type 3C-SiC are not due to N impurities. 45–70 % of N-donors in the N-doped epilayers are compensated.

Schottky-barrier and MOS-type field-effect transistors have been fabricated from 3C-SiC. The transistor operations of MESFETs and MOSFETs were studied at elevated temperatures up to 440°C. Transconductances of 1.7mS/mm and 0.15mS/mm for MESFET and 0.8 and 0.05mS/mm for MOSFET at room temperature and 440°C, respectively, were obtained. The drain currentvoltage characteristics of both the FETs at room temperature did not change in the least after heating up to 440°C in the air.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 97: Symposium I – Novel Refractory Semiconductors , 1987 , 259
Copyright
Copyright © Materials Research Society 1987

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References

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