Hostname: page-component-848d4c4894-4rdrl Total loading time: 0 Render date: 2024-07-01T04:47:25.087Z Has data issue: false hasContentIssue false
  • English
  • Français

Electrical Characterization of High-k Dielectrics by Means of Flat-Band Voltage Transient Recording

Published online by Cambridge University Press:  01 February 2011

Salvador Duenas ,
Helena Castán ,
Héctor García ,
Luis Bailón ,
Kaupo Kukli ,
Mikko Ritala  and
Markus Leskela
Salvador Duenas
Affiliation:
sduenas@ele.uva.es, Universidad De Valladolid, Electricidad Y Electrónica, Etsi Telecomunicacion, Campus Miguel Delibes S/N, Valladolid, 47011, Spain, 983423679, 983423675
Helena Castán
Affiliation:
helena@ele.uva.es, Universidad de Valladolid, Dept. Electricidad y Electrónica, ETSI Telecomunicación,, Campus Miguel Delibes S/N, Valladolid, 47011, Spain
Héctor García
Affiliation:
hecgar@tel.uva.es, Universidad de Valladolid, Dept. Electricidad y Electrónica, ETSI Telecomunicación,, Campus Miguel Delibes S/N, Valladolid, 47011, Spain
Luis Bailón
Affiliation:
lbailón@ele.uva.es, Universidad de Valladolid, Dept. Electricidad y Electrónica, ETSI Telecomunicación,, Campus Miguel Delibes S/N, Valladolid, 47011, Spain
Kaupo Kukli
Affiliation:
kaupo.kukli@ut.ee, University of Tartu, Institute of Experimental Physics and Technology, Tartu, 51010, Estonia
Mikko Ritala
Affiliation:
Mikko.Ritala@helsinki.fi, University of Helsinki, Dept. of Chemistry, Helsinki, FIN-00014, Finland
Markus Leskela
Affiliation:
leskela@mappi.helsinki.fi, University of Helsinki, Dept. of Chemistry, Helsinki, FIN-00014, Finland
Get access

Abstract

We have carried out a comparison between flat-band transients displayed in metal-oxide-semiconductor (MOS) structures fabricated on several atomic layer deposited (ALD) high-k dielectric films: HfO2, ZrO2, Al2O3, Ta2O5, TiO2, and Gd2O3. The gate voltage as a function of time is recorded while keeping constant the capacitance at the initial flat band condition (CFB). Since samples are in darkness, under no electric fields and no charge-injection conditions, transients must be due to charge trapping of localized states produced by electrons (holes) coming from the semiconductor by tunnelling. The process is assisted by phonons and it is therefore thermally activated. The temperature-transient amplitude relation follows an Arrhenius plot which provides the thermal activation energy of soft-optical phonons. Finally, we describe the dependencies of the flat-band voltage on the setup bias history (accumulation or inversion) and the hysteresis sign (clockwise or counter-clockwise) of the capacitance-voltage (C-V) characteristics of MOS structures.

Keywords

dielectricelectrical propertiesthin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 996: Symposium H – Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies , 2007 , 0996-H07-11
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Wilk, G.D., Wallace, R.M. and Anthony, J.M. J. Appl. Phys. 89 (2001) 5243.Google Scholar
2. Zafar, S., Kumar, A., Gusev, E. and Cartier, E., IEEE Tans. On Dev. and Mater. Rel., 5(1) (2005) 45.Google Scholar
3. O'Connor, R., McDonnell, S., Hughes, G., Degraeve, R. and Kauerauf, T., Semicond. Sci. Technol. 20 (2005) 668–67.Google Scholar
4. Park, B.E. and Ishiwara, H., Appl. Phys. Lett. 82 (2003) 1197.Google Scholar
5. Suntola, T.. Thin Solid Films 216 (1992) 84.Google Scholar
6. Dueñas, S, Castán, H, Garcáa, H, Andrés, E San, Toledano-Luque, M, Mírtil, I, GonzálezDíaz, G, Kukli, K, Uustare, T and Aarik, J, Semicond. Sci. Technol. 20 (2005)Google Scholar